N. Segercrantz
Electronic band structure of highly mismatched GaN1?xSbx alloys in a broad composition range
Segercrantz, N.; Yu, K.M.; Ting, M.; Sarney, W.L.; Svensson, S.P.; Novikov, S.V.; Foxon, C.T.; Walukiewicz, W.
Authors
K.M. Yu
M. Ting
W.L. Sarney
S.P. Svensson
SERGEI NOVIKOV sergei.novikov@nottingham.ac.uk
Professor of Physics
C.T. Foxon
W. Walukiewicz
Abstract
In this letter, we study the optical properties of GaN1?xSbx thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 ?C. The measured optical absorption data of the films are interpreted using a modified band anticrossing model that is applicable to highly mismatched alloys such as GaN1?xSbx in the entire composition range. The presented model allows us to more accurately determine the band gap as well as the band
edges over the entire composition range thereby providing means for determining the composition for, e.g., efficient spontaneous photoelectrochemical cell applications
Citation
Segercrantz, N., Yu, K., Ting, M., Sarney, W., Svensson, S., Novikov, S., …Walukiewicz, W. (in press). Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range. Applied Physics Letters, 107(14), Article 142104. https://doi.org/10.1063/1.4932592
Journal Article Type | Article |
---|---|
Acceptance Date | Sep 25, 2015 |
Online Publication Date | Oct 6, 2015 |
Deposit Date | Jul 8, 2016 |
Publicly Available Date | Mar 29, 2024 |
Journal | Applied Physics Letters |
Print ISSN | 0003-6951 |
Electronic ISSN | 1077-3118 |
Publisher | American Institute of Physics |
Peer Reviewed | Peer Reviewed |
Volume | 107 |
Issue | 14 |
Article Number | 142104 |
DOI | https://doi.org/10.1063/1.4932592 |
Public URL | https://nottingham-repository.worktribe.com/output/764541 |
Publisher URL | http://scitation.aip.org/content/aip/journal/apl/107/14/10.1063/1.4932592 |
Additional Information | Electronic band structure of highly mismatched GaN1-xSbx alloys in a broad composition range. N. Segercrantz1,2,a), K.M. Yu, M. Ting, W.L. Sarney, S.P. Svensson, S.V. Novikov, C.T. Foxon and W. Walukiewicz. Appl. Phys. Lett. 107, 142104 (2015); http://dx.doi.org/10.1063/1.4932592 |
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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf
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