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Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range

Segercrantz, N.; Yu, K.M.; Ting, M.; Sarney, W.L.; Svensson, S.P.; Novikov, S.V.; Foxon, C.T.; Walukiewicz, W.

Authors

N. Segercrantz

K.M. Yu

M. Ting

W.L. Sarney

S.P. Svensson

C.T. Foxon

W. Walukiewicz



Abstract

In this letter, we study the optical properties of GaN1�xSbx thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 �C. The measured optical absorption data of the films are interpreted using a modified band anticrossing model that is applicable to highly mismatched alloys such as GaN1�xSbx in the entire composition range. The presented model allows us to more accurately determine the band gap as well as the band
edges over the entire composition range thereby providing means for determining the composition for, e.g., efficient spontaneous photoelectrochemical cell applications

Journal Article Type Article
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 107
Issue 14
Article Number 142104
APA6 Citation Segercrantz, N., Yu, K., Ting, M., Sarney, W., Svensson, S., Novikov, S., …Walukiewicz, W. (in press). Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range. Applied Physics Letters, 107(14), https://doi.org/10.1063/1.4932592
DOI https://doi.org/10.1063/1.4932592
Publisher URL http://scitation.aip.org/content/aip/journal/apl/107/14/10.1063/1.4932592
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf
Additional Information Electronic band structure of highly mismatched GaN1-xSbx alloys in a broad composition range. N. Segercrantz1,2,a), K.M. Yu, M. Ting, W.L. Sarney, S.P. Svensson, S.V. Novikov, C.T. Foxon and W. Walukiewicz. Appl. Phys. Lett. 107, 142104 (2015); http://dx.doi.org/10.1063/1.4932592

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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