All Outputs (4)

Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes (2018)
Conference Proceeding

The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper... Read More about Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes.

Built-in reliability design of a high-frequency SiC MOSFET power module (2014)
Conference Proceeding

A high frequency SiC MOSFET-based three-phase, 2-level power module has been designed, simulated, assembled and tested. The design followed a built-in reliability approach, involving extensive finite-element simulation based analysis of the electro-t... Read More about Built-in reliability design of a high-frequency SiC MOSFET power module.

Testing of a lightweight SiC power module for avionic applications (2014)
Conference Proceeding

Functional and performance tests of a three-phase, two-level power module based on CREE 1.2kV SiC MOSFETs for avionic applications is presented in this paper. SiC devices have superior properties over conventional Si devices at high voltage operation... Read More about Testing of a lightweight SiC power module for avionic applications.

Intelligent impedance based fault-location for zonal power systems (2014)
Conference Proceeding

A laboratory based demonstrator has been constructed to study the Active Impedance Estimation (AIE) technique as a means of locating faults on a power system. The demonstrator has been used to verify results from simulation experimentally. The AIE sy... Read More about Intelligent impedance based fault-location for zonal power systems.