Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs
(2008)
Book Chapter
The growth of cubic (Ga,Mn)N/(001)GaAs heterostructures by plasma assisted molecular beam epitaxy has been appraised as a function of Ga:N ratio, Mn concentration and growth temperature. The combined analytical techniques of EFTEM, EDX, CBED and dark... Read More about Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs.