All Outputs (108)

Remarkable thermal conductivity enhancement in Ag—decorated graphene nanocomposites based nanofluid by laser liquid solid interaction in ethylene glycol (2020)
Journal Article
Mbambo, M. C., Khamlich, S., Khamliche, T., Moodley, M. K., Kaviyarasu, K., Madiba, I. G., …Maaza, M. (2020). Remarkable thermal conductivity enhancement in Ag—decorated graphene nanocomposites based nanofluid by laser liquid solid interaction in ethylene glycol. Scientific Reports, 10, Article 10982. https://doi.org/10.1038/s41598-020-67418-3

We report on the synthesis and enhanced thermal conductivity of stable Ag-decorated 2-D graphene nanocomposite in ethylene glycol based nanofluid by laser liquid solid interaction. A surfactant free nanofluid of Ag nanoparticles anchored onto the 2-D... Read More about Remarkable thermal conductivity enhancement in Ag—decorated graphene nanocomposites based nanofluid by laser liquid solid interaction in ethylene glycol.

The Influence Of Point Defects And Dislocation On AlGaN-Based Deep Ultraviolet LEDs (2020)
Journal Article
Ma, Z., Almalki, A., Yang, X., Wu, X., Xi, X., Li, J., Lin, S., Li, X., Alotaibi, S., Al huwayzce, M., Henini, M., & Zhao, L. (2020). The Influence Of Point Defects And Dislocation On AlGaN-Based Deep Ultraviolet LEDs. Journal of Alloys and Compounds, 845, Article 156177. https://doi.org/10.1016/j.jallcom.2020.156177

AlGaN-based deep ultraviolet LEDs with high Al composition are promising for many applications, including air- or water-purification, fluorescence sensing, etc. However, to realize their full potential, it is important to understand the impact of the... Read More about The Influence Of Point Defects And Dislocation On AlGaN-Based Deep Ultraviolet LEDs.

Investigation of the effect of different thicknesses and thermal annealing on the optical properties of GaAs0.1P0.89N0.01 alloys grown on GaP substrates (2020)
Journal Article
Alburaiha, H., Albalawi, H., & Henini, M. (2020). Investigation of the effect of different thicknesses and thermal annealing on the optical properties of GaAs0.1P0.89N0.01 alloys grown on GaP substrates. Materials Science in Semiconductor Processing, 117, Article 105143. https://doi.org/10.1016/j.mssp.2020.105143

This work investigates the effect of the thickness of the epitaxial layer (100 nm and 1 μm) on the optical properties of quaternary GaAs0.1P0.89N0.01 alloys. Furthermore, the effect of rapid thermal annealing (RTA) on their properties has been studie... Read More about Investigation of the effect of different thicknesses and thermal annealing on the optical properties of GaAs0.1P0.89N0.01 alloys grown on GaP substrates.

Effect of thermal annealing on the opticaland structural properties of (311)B and(001) GaAsBi/GaAs single quantum wellsgrown by MBE (2020)
Journal Article
Alghamdi, H., Gordo, V. O., Schmidbauer, M., Felix, J. F., Alhassan, S., Alhassni, A., …Henini, M. (2020). Effect of thermal annealing on the opticaland structural properties of (311)B and(001) GaAsBi/GaAs single quantum wellsgrown by MBE. Journal of Applied Physics, 127(12), Article 125704. https://doi.org/10.1063/1.5140447

The effect of Furnace Annealing (FA) and Rapid Thermal annealing (RTA) on the structural and optical properties of GaAs1 − xBix/GaAs single quantum wells grown on (001) and (311)B substrates by molecular beam epitaxy was investigated. The structural... Read More about Effect of thermal annealing on the opticaland structural properties of (311)B and(001) GaAsBi/GaAs single quantum wellsgrown by MBE.

Effect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE (2020)
Journal Article
Alghamdi, H., Gordo, V. O., Schmidbauer, M., Felix, J. F., Alhassan, S., Alhassni, A., …Henini, M. (2020). Effect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE. Journal of Applied Physics, 127(12), Article 125704. https://doi.org/10.1063/1.5140447

Structural, optical and electrical properties of electron beam evaporated TiOxNy films as selective solar absorber coatings (2020)
Journal Article
Berhane, D., Rodrigues, M., Henini, M., Maaza, M., & Nuru, Z. (2020). Structural, optical and electrical properties of electron beam evaporated TiOxNy films as selective solar absorber coatings. Journal of Applied Material Science & Engineering Research, 4(1), Article 30

Titanium oxinitride (TiOxNy) solar absorber coatings were deposited at different oxygen partial pressures onto Cu, Si and glass substrates using electron beam evaporation technique. XRD diffraction patterns evidenced (111), (200) and (220) orientatio... Read More about Structural, optical and electrical properties of electron beam evaporated TiOxNy films as selective solar absorber coatings.

A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer (2019)
Journal Article
Filali, W., Garoudja, E., Oussalah, S., Mekheldi, M., Sengouga, N., & Henini, M. (2019). A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer. Mikroelektronika / Russian Microelectronics, 48(6), 428-434. https://doi.org/10.1134/s1063739719660028

We report the capacitance-voltage (C–V) characteristics of multi quantum wells Schottky diode. This diode is based on Aluminum gallium arsenide, which is highly promising wide band gap semiconductor for applications in high power electronic and optoe... Read More about A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer.

The Efficiency of Best-so-far ABC Algorithm Versus Analytical Methods for Schottky Diode Parameters Extraction (2019)
Journal Article
Filali, W., Garoudja, E., Oussalah, S., Sengouga, N., Henini, M., & Taylor, D. (2019). The Efficiency of Best-so-far ABC Algorithm Versus Analytical Methods for Schottky Diode Parameters Extraction. journal of Nano- and Electronic Physics, 11(5), Article 05012. https://doi.org/10.21272/jnep.11%285%29.05012

In this work, we investigate the forward current-voltage characteristics of p-type Ti/Au/Al0.29Ga0.71As Schottky diode, which were measured over a range of temperatures from 260 to 400 K. The experimental current-voltage characteristics are used to e... Read More about The Efficiency of Best-so-far ABC Algorithm Versus Analytical Methods for Schottky Diode Parameters Extraction.

Investigation of the effects of GaAs substrate orientations on the electrical properties of sulfonated polyaniline based heterostructures (2019)
Journal Article
Jameel, D. A., Marroquin, J. F. R., Aziz, M., Al Saqri, N. A., Jum'h, I., Telfah, A., …Felix, J. F. (2020). Investigation of the effects of GaAs substrate orientations on the electrical properties of sulfonated polyaniline based heterostructures. Applied Surface Science, 504, Article 144315. https://doi.org/10.1016/j.apsusc.2019.144315

In this work we present a detailed study of the influence of the GaAs substrate orientation on the electrical properties of heterojunctions based on GaAs and sulfonated polyaniline (SPAN) using Current-Voltage (I-V), Capacitance-Voltage (C-V), Deep-L... Read More about Investigation of the effects of GaAs substrate orientations on the electrical properties of sulfonated polyaniline based heterostructures.

A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS2 monolayer semiconductor (2019)
Journal Article
Felix, J. F., Da Silva, A. F., Da Silva, S. W., Qu, F., Qiu, B., Ren, J., …Huang, C. C. (2020). A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS2 monolayer semiconductor. Nanoscale Horizons, 5(2), 259-267. https://doi.org/10.1039/c9nh00414a

© 2020 The Royal Society of Chemistry. This article reports the effects of gamma radiation on the structural, optical and magnetic properties of monolayer tungsten disulfide (WS2) grown by a scalable van der Waals epitaxial (VdWE) process on a SiO2 c... Read More about A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS2 monolayer semiconductor.

Effects of Nitrogen Incorporation and Thermal Annealing on the Optical and Spin Properties of GaPN Dilute Nitride Alloys (2019)
Journal Article
Balanta, M., de Oliveira, P., Albalawi, H., Galvão Gobato, Y., Galeti, H., Rodrigues, A., …Cornet, C. (2020). Effects of Nitrogen Incorporation and Thermal Annealing on the Optical and Spin Properties of GaPN Dilute Nitride Alloys. Journal of Alloys and Compounds, 814, Article 152233. https://doi.org/10.1016/j.jallcom.2019.152233

Here, we report on the structural, optical and magneto-optical properties of as-grown and thermal annealed GaPN thin films containing different N concentrations grown by Solid-Source Molecular Beam Epitaxy on GaP substrates. A wide range of character... Read More about Effects of Nitrogen Incorporation and Thermal Annealing on the Optical and Spin Properties of GaPN Dilute Nitride Alloys.

Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes (2019)
Journal Article
Alburaih, H. A., Albalawi, H., & Henini, M. (2019). Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes. Semiconductor Science and Technology, 34(10), Article 105009. https://doi.org/10.1088/1361-6641/ab3671

© 2019 IOP Publishing Ltd. The effect of rapid thermal annealing on the electrical properties of p++GaP/p-GaAsPN/n+GaP diodes were investigated by using current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) tec... Read More about Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes.

Role of interface potential barrier, Auger recombination and temporal coherence in In0.5Ga0.5As/GaAs quantum dots based p-i-n light emitting diodes (2018)
Journal Article
Singh, M. K., Bhunia, A., Al Huwayz, M., Gobato, Y. G., Henini, M., & Datta, S. (2019). Role of interface potential barrier, Auger recombination and temporal coherence in In0.5Ga0.5As/GaAs quantum dots based p-i-n light emitting diodes. Journal of Physics D: Applied Physics, 52(9), Article 095102. https://doi.org/10.1088/1361-6463/aaf61c

© 2018 IOP Publishing Ltd. In this work, we investigate the mechanisms that control the electroluminescence from p-i-n heterostructures containing self-assembled In 0.5 Ga 0.5 As quantum dots embedded inside a GaAs/Al 0.3 Ga 0.7 As quantum well as a... Read More about Role of interface potential barrier, Auger recombination and temporal coherence in In0.5Ga0.5As/GaAs quantum dots based p-i-n light emitting diodes.

Optical Properties of GaAs1−xBix/GaAs Quantum Well Structures Grown by Molecular Beam Epitaxy on (100) and (311)B GaAs Substrates (2018)
Journal Article
Gunes, M., Ukelge, M., Donmez, O., Erol, A., Gumus, C., Alghamdi, H., …Guina, M. (2018). Optical Properties of GaAs1−xBix/GaAs Quantum Well Structures Grown by Molecular Beam Epitaxy on (100) and (311)B GaAs Substrates. Semiconductor Science and Technology, 33(12), Article 124015. https://doi.org/10.1088/1361-6641/aaea2e

In this work, the electronic bandstructure of GaAs1−xBix/GaAs single quantum well (QW) samples grown by molecular beam epitaxy is investigated by photomodulated reflectance (PR) measurements as a function of Bi content (0.0065 ≤ x ≤ 0.0215) and subst... Read More about Optical Properties of GaAs1−xBix/GaAs Quantum Well Structures Grown by Molecular Beam Epitaxy on (100) and (311)B GaAs Substrates.

Experimental Detection and Control of Trions and Fermi-Edge Singularity in Single-Barrier GaAs/AlAs/GaAs Heterostructures Using Photocapacitance Spectroscopy (2018)
Journal Article
Bhunia, A., Singh, M. K., Gobato, Y. G., Henini, M., & Datta, S. (2018). Experimental Detection and Control of Trions and Fermi-Edge Singularity in Single-Barrier GaAs/AlAs/GaAs Heterostructures Using Photocapacitance Spectroscopy. Physical Review Applied, 10(4), Article 044043. https://doi.org/10.1103/physrevapplied.10.044043

© 2018 American Physical Society. We show how photocapacitance spectra can probe and manipulate two dimensional excitonic complexes and Fermi-edge singularities as a function of applied bias even at a temperature of 100 K. For lower density regimes (... Read More about Experimental Detection and Control of Trions and Fermi-Edge Singularity in Single-Barrier GaAs/AlAs/GaAs Heterostructures Using Photocapacitance Spectroscopy.

Effect of indium doping on the electrical and structural properties of TiO2 thin films used in MOS devices (2018)
Journal Article
Djeglouf, A., Hamri, D., Teffahi, A., Saidane, A., Al Mashary, F. S., Al Huwayz, M. M., Henini, M., Orak, I., Albadri, A. M., & Alyamani, A. Y. (2019). Effect of indium doping on the electrical and structural properties of TiO2 thin films used in MOS devices. Journal of Alloys and Compounds, 775, 202-213. https://doi.org/10.1016/j.jallcom.2018.10.048

We investigated the effect of Indium (In) doping on the structural and electrical properties of Ti/Au/ TiO2:In/n-Si metal-oxide-semiconductor (MOS) devices. Sputtering grown TiO2 thin films on Si substrate were doped using two In-films with 15 nm and... Read More about Effect of indium doping on the electrical and structural properties of TiO2 thin films used in MOS devices.

Investigation of optical and electrical properties of erbium-doped TiO2 thin films for photodetector applications (2018)
Journal Article
Mondal, S., Ghosh, A., Rizzo Piton, M., Gomes, J. P., Felix, J. F., Galvão Gobato, Y., …Mondal, A. (2018). Investigation of optical and electrical properties of erbium-doped TiO2 thin films for photodetector applications. Journal of Materials Science: Materials in Electronics, 29(22), 19588–19600. https://doi.org/10.1007/s10854-018-0090-1

We have investigated the electrical and optical properties of erbium (Er3+) doped TiO2 thin films (Er:TiO2 TFs) grown by sol–gel technique on glass and silicon substrates. The samples were characterized by field emission gun–scanning electron microsc... Read More about Investigation of optical and electrical properties of erbium-doped TiO2 thin films for photodetector applications.

Evaluation on La2O3 garlanded ceria heterostructured binary metal oxide nanoplates for UV/ visible light induced removal of organic dye from urban wastewater (2018)
Journal Article
Magdalane, C. M., Kaviyarasu, K., Matinise, N., Mayedwa, N., Mongwaketsi, N., Letsholathebe, D., …Jeyaraj, B. (2018). Evaluation on La2O3 garlanded ceria heterostructured binary metal oxide nanoplates for UV/ visible light induced removal of organic dye from urban wastewater. South African Journal of Chemical Engineering, 26, 49-60. https://doi.org/10.1016/j.sajce.2018.09.003

A low energy bandgap between Ce3+ and Ce4+ states in cerium oxides, high oxygen mobility and high oxygen storage capacity are the properties that qualify them to be the most widely used heterogeneous catalysts. This present work is an account of stud... Read More about Evaluation on La2O3 garlanded ceria heterostructured binary metal oxide nanoplates for UV/ visible light induced removal of organic dye from urban wastewater.

Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates (2018)
Journal Article
Prando, G., Orsi Gordo, V., Puustinen, J., Hilska, J., Alghamdi, H., Som, G., …Guina, M. (2018). Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, 33(8), Article 084002. https://doi.org/10.1088/1361-6641/aad02e

In this work, we have investigated the structural and optical properties of GaAs(1−x)Bix/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311)B substrates using x-ray diffraction, atomic force microscopy, Fourier-transform Ram... Read More about Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates.

Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2thin films (2018)
Journal Article
Al mashary, F. S., de Castro, S., da Silva, A. F., Felix, J. F., Piton, M. R., Avanço Galeti, H. V., De Giovanni Rodrigues, A., Galvão Gobato, Y., Al Saqri, N., Henini, M., Al huwayz, M. M., Albadri, A. M., Alyamani, A. Y., Albrathen, H. . A., Alhusaini, S. A., Aljaber, K. M., Alanazi, A. Z., & Alghamdi, F. S. (in press). Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2thin films. Journal of Alloys and Compounds, 766, https://doi.org/10.1016/j.jallcom.2018.06.360

We have investigated the effect of the growth techniques on the structural, the electrically and optically active defects in Indium doped TiO2 thin films grown by pulsed laser deposition (PLD) and sputtering techniques. X-ray diffraction (XRD) and Ra... Read More about Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2thin films.