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The Influence Of Point Defects And Dislocation On AlGaN-Based Deep Ultraviolet LEDs

Ma, Zhanhong; Almalki, Abdulaziz; Yang, Xin; Wu, Xing; Xi, Xin; Li, Jing; Lin, Shan; Li, Xiaodong; Alotaibi, Saud; Al huwayzce, Maryam; Henini, Mohamed; Zhao, Lixia


Zhanhong Ma

Abdulaziz Almalki

Xin Yang

Xing Wu

Xin Xi

Jing Li

Shan Lin

Xiaodong Li

Saud Alotaibi

Maryam Al huwayzce

Lixia Zhao


AlGaN-based deep ultraviolet LEDs with high Al composition are promising for many applications, including air- or water-purification, fluorescence sensing, etc. However, to realize their full potential, it is important to understand the impact of the point defects on the device performance. Here, we investigate the defects in the 265 nm AlGaN-based deep ultraviolet LEDs after degradation systematically with a combination of different analytical technologies. The results show that point defects increase after the degradation. The generated defects during the stress lead to a carrier redistribution in the active region and the induced point defects during the degradation are located within the multi-quantum wells (MQWs) region, especially in the first quantum well near the p side of the LED chip. The dislocation lines in the MQWs region were also observed after the degradation, which can lead to the Mg diffusion along the dislocation line. These findings are important to understand the defects in AlGaN quantum wells and further improve AlGaN-based deep ultraviolet LEDs’ performance.


Ma, Z., Almalki, A., Yang, X., Wu, X., Xi, X., Li, J., …Zhao, L. (2020). The Influence Of Point Defects And Dislocation On AlGaN-Based Deep Ultraviolet LEDs. Journal of Alloys and Compounds, 845, Article 156177.

Journal Article Type Article
Acceptance Date Jun 22, 2020
Online Publication Date Jun 26, 2020
Publication Date Dec 10, 2020
Deposit Date Aug 19, 2020
Publicly Available Date Jun 27, 2021
Journal Journal of Alloys and Compounds
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 845
Article Number 156177
Public URL
Publisher URL


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