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Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures

Al Huwayz, M.; Jameel, D. A.; Alotaibi, S.; Alhassan, S.; Almalki, A.; Al Saqri, N.; Al Saleh, Y.; Alhassni, A.; Almunyif, A.; Lemine, O. M.; Salhi, A.; Henini, M.

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Authors

M. Al Huwayz

D. A. Jameel

S. Alotaibi

S. Alhassan

A. Almalki

N. Al Saqri

Y. Al Saleh

A. Alhassni

A. Almunyif

O. M. Lemine

A. Salhi



Abstract

In this work, the effects of the substrate material on the electrical properties of self-assembled InAs quantum dots (QDs)-based laser structures have been reported. Two InAs QD laser structures with the same active regions deposited on GaAs and Si substrates utilizing strain reducing layer (SRL) containing GaAs/InGaAs have been investigated using current–voltage (I–V), capacitance–voltage, and Deep-Level Transient Spectroscopy (DLTS) techniques. The I–V measurements illustrated that the rectification ratio (IF/IR) and built-in potential (ϕB) for the sample deposited on Si substrate are higher than that of sample deposited on GaAs substrate. However, the series resistance (Rs) of the InAs QDs deposited on Si substrate is lower than that of the InAs QDs deposited on GaAs substrate. The DLTS and Laplace-DLTS measurements showed that the number of traps in InAs QDs/GaAs devices is lower than that in InAs QDs/Si devices, corroborating with I–V results.

Journal Article Type Article
Acceptance Date Apr 4, 2023
Online Publication Date May 10, 2023
Publication Date 2023-06
Deposit Date May 14, 2023
Publicly Available Date May 11, 2024
Journal Applied Physics A
Print ISSN 0947-8396
Electronic ISSN 1432-0630
Publisher Springer Science and Business Media LLC
Peer Reviewed Peer Reviewed
Volume 129
Issue 6
Article Number 405
DOI https://doi.org/10.1007/s00339-023-06626-w
Keywords InAs quantum dots (QDs) · GaAs · Si · I–V · C–V · DLTS
Public URL https://nottingham-repository.worktribe.com/output/20746775
Publisher URL https://link.springer.com/article/10.1007/s00339-023-06626-w

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