All Outputs (109)

Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes (2016)
Journal Article

Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G/?-V-f) measurements at room temperature are used to study 50 kGy 60Co ?-ray electrical properties irradiation dependence of Ti/Au/GaAs1?xNx Schottky dio... Read More about Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes.

Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes (2016)
Journal Article

We have investigated the polarization-resolved electroluminescence (EL) of a p–i–n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x  =  5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunnel... Read More about Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes.

Surface-enhanced Raman spectroscopy study of 4-ATP on gold nanoparticles for basal cell carcinoma fingerprint detection (2016)
Journal Article

The surface-enhanced Raman signals of 4-aminothiophenol (4-ATP) attached to the surface of colloidal gold nanoparticles with size distribution of 2 to 5 nm were used as a labeling agent to detect basal cell carcinoma (BCC) of the skin. The enhanced R... Read More about Surface-enhanced Raman spectroscopy study of 4-ATP on gold nanoparticles for basal cell carcinoma fingerprint detection.

Modeling the effect of 1 MeV electron irradiation on the performance of n(+)-p-p(+) silicon space solar cells (2016)
Journal Article

Energetic particles such as electrons and protons induce severe degradation on the performance of solar cells used to power satellites and space vehicles. This degradation is usually attributed to lattice damage in the active region of the solar cell... Read More about Modeling the effect of 1 MeV electron irradiation on the performance of n(+)-p-p(+) silicon space solar cells.

Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures (2015)
Journal Article

In this study we report in-plane nanotracks produced by molecular-beam-epitaxy (MBE) exhibiting lateral self-assembly and unusual periodic and out-of-phase height variations across their growth axes. The nanotracks are synthesized using bismuth segre... Read More about Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures.

Detection of anomalous Hall voltages in ultrahigh-mobility two-dimensional hole gases generated by optical spin orientation (2015)
Journal Article

By combining optical spin orientation and an externally applied longitudinal electric field, transverse charge accumulation has been detected in very high-mobility two-dimensional hole gases by measuring the transverse voltage drop across simple Hall... Read More about Detection of anomalous Hall voltages in ultrahigh-mobility two-dimensional hole gases generated by optical spin orientation.

Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias (2014)
Journal Article

We observed qualitatively dissimilar frequency dependence of negative capacitance under high charge injection in two sets of functionally different junction diodes: III-V based light emitting and Si-based non-light emitting diodes. Using an advanced... Read More about Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias.

Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration (2014)
Journal Article

We report room-temperature Raman scattering studies of nominally undoped (100) GaAs1−xBix epitaxial layers exhibiting Biinduced (p-type) longitudinal-optical-plasmon coupled (LOPC) modes for 0.018≤x≤0.048. Redshifts in the GaAs-like optical modes due... Read More about Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration.

Scanning capacitance imaging of compressible and incompressible quantum Hall effect edge strips (2012)
Journal Article

We use dynamic scanning capacitance microscopy to image compressible and incompressible strips at the edge of a Hall bar in a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime. This method gives access to the complex local c... Read More about Scanning capacitance imaging of compressible and incompressible quantum Hall effect edge strips.