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Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias

Bansal, Kanika; Henini, M.; Alshammari, Marzook S.; Datta, Shouvik

Authors

Kanika Bansal b.kanika@students.iiserpune.ac.in

Marzook S. Alshammari alshammari@kacst.edu.sa

Shouvik Datta shouvik@iiserpune.ac.in



Abstract

We observed qualitatively dissimilar frequency dependence of negative capacitance under high charge injection in two sets of functionally different junction diodes: III-V based light emitting and Si-based non-light emitting diodes. Using an advanced approach based on bias activated differential capacitance, we developed a generalized understanding of negative capacitance phenomenon which can be extended to any diode based device structure. We explained the observations as the mutual competition of fast and slow electronic transition rates which are different in different devices. This study can be useful in understanding the interfacial effects in semiconductor heterostructures and may lead to superior device functionality.

Journal Article Type Article
Publication Date Sep 24, 2014
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 105
Issue 12
Article Number 123503
APA6 Citation Bansal, K., Henini, M., Alshammari, M. S., & Datta, S. (2014). Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias. Applied Physics Letters, 105(12), https://doi.org/10.1063/1.4896541
DOI https://doi.org/10.1063/1.4896541
Publisher URL http://scitation.aip.org/content/aip/journal/apl/105/12/10.1063/1.4896541
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf
Additional Information c2014 AIP Publishing LLC Bansal, K and Henini, M and Alshammari, M.S. and Datta, S (2014) Dynamics of Electronic Transitions and Frequency Dependence of Negative Capacitance in Semiconductor Diodes Under High Forward Bias.
Applied Physics Letters, 105 http://scitation.aip.or...05/12/10.1063/1.4896541

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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