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Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration

Steele, J.A.; Lewis, R.A.; Henini, M.; Lemine, O.M.; Fan, D; Mazur, Y.I.; Dorogan, V.G.; Grant, P.C.; Yu, S.Q.; Salamo, G.J.

Authors

J.A. Steele js598@uowmail.edu.au

R.A. Lewis roger@uow.edu.au

O.M. Lemine

D Fan

Y.I. Mazur

V.G. Dorogan

P.C. Grant

S.Q. Yu

G.J. Salamo



Abstract

We report room-temperature Raman scattering studies of nominally undoped (100) GaAs1−xBix epitaxial layers exhibiting Biinduced (p-type) longitudinal-optical-plasmon coupled (LOPC) modes for 0.018≤x≤0.048. Redshifts in the GaAs-like optical modes due to alloying are evaluated and are paralleled by strong damping of the LOPC. The relative integrated Raman intensities of LO(Γ) and LOPC ALO/ALOPC are characteristic of heavily doped p-GaAs, with a remarkable near total screening of the LO(Γ) phonon (ALO/ALOPC →0) for larger Bi concentrations. A method of spectral analysis is set out which yields estimates of hole concentrations in excess of 5 × 1017 cm−3 and correlates with the Bi molar fraction. These findings are in general agreement with recent electrical transport measurements performed on the alloy, and while the absolute size of the hole concentrations differ, likely origins for the discrepancy are discussed. We conclude that the damped LO-phonon-hole-plasmon coupling phenomena plays a dominant role in Raman scattering from unpassivated nominally undoped GaAsBi.

Citation

Steele, J., Lewis, R., Henini, M., Lemine, O., Fan, D., Mazur, Y., …Salamo, G. (2014). Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration. Optics Express, 22(10), https://doi.org/10.1364/OE.22.011680

Journal Article Type Article
Acceptance Date Apr 29, 2014
Publication Date May 7, 2014
Deposit Date Jul 1, 2016
Publicly Available Date Jul 1, 2016
Journal Optics Express
Electronic ISSN 1094-4087
Publisher Optical Society of America
Peer Reviewed Peer Reviewed
Volume 22
Issue 10
DOI https://doi.org/10.1364/OE.22.011680
Public URL http://eprints.nottingham.ac.uk/id/eprint/34557
Publisher URL https://www.osapublishing.org/oe/abstract.cfm?uri=oe-22-10-11680
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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