D.H. Rodrigues
Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes
Rodrigues, D.H.; Brasil, M.J.S.P.; Orlita, M.; Kunc, J.; Galeti, H.V.A.; Henini, M.; Taylor, D.; H.V.A., Y.G.
Authors
M.J.S.P. Brasil
M. Orlita
J. Kunc
H.V.A. Galeti
Professor MOHAMED HENINI MOHAMED.HENINI@NOTTINGHAM.AC.UK
PROFESSOR OF APPLIED PHYSICS
D. Taylor
Y.G. H.V.A.
Abstract
We have investigated the polarization-resolved electroluminescence (EL) of a p–i–n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x = 5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spin-polarized source for holes tunneling through the device. Polarization degrees up to 80% were observed in the device around the hole resonance at 2 K under 15 T. Our results could be valuable for improving the hole-spin injection in GaMnAs-based spintronic devices.
Citation
Rodrigues, D., Brasil, M., Orlita, M., Kunc, J., Galeti, H., Henini, M., Taylor, D., & H.V.A., Y. (2016). Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes. Journal of Physics D: Applied Physics, 49(16), https://doi.org/10.1088/0022-3727/49/16/165104
Journal Article Type | Article |
---|---|
Acceptance Date | Mar 2, 2016 |
Publication Date | Mar 24, 2016 |
Deposit Date | Jan 4, 2017 |
Publicly Available Date | Jan 4, 2017 |
Journal | Journal of Physics D: Applied Physics |
Print ISSN | 0022-3727 |
Electronic ISSN | 1361-6463 |
Publisher | IOP Publishing |
Peer Reviewed | Peer Reviewed |
Volume | 49 |
Issue | 16 |
DOI | https://doi.org/10.1088/0022-3727/49/16/165104 |
Public URL | https://nottingham-repository.worktribe.com/output/779319 |
Publisher URL | http://iopscience.iop.org/article/10.1088/0022-3727/49/16/165104/meta |
Contract Date | Jan 4, 2017 |
Files
J.PhysD_GaMnAs RTD_Gobato-revised (002).pdf
(381 Kb)
PDF
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