All Outputs (107)

Modeling the effect of 1 MeV electron irradiation on the performance of n(+)-p-p(+) silicon space solar cells (2016)
Journal Article
Hamache, A., Sengouga, N., Meftah, A., & Henini, M. (2016). Modeling the effect of 1 MeV electron irradiation on the performance of n(+)-p-p(+) silicon space solar cells. Radiation Physics and Chemistry, 123, https://doi.org/10.1016/j.radphyschem.2016.02.025

Energetic particles such as electrons and protons induce severe degradation on the performance of solar cells used to power satellites and space vehicles. This degradation is usually attributed to lattice damage in the active region of the solar cell... Read More about Modeling the effect of 1 MeV electron irradiation on the performance of n(+)-p-p(+) silicon space solar cells.

Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures (2015)
Journal Article
Steele, J., Horvat, J., Lewis, R., Henini, M., Fan, D., Mazur, Y., …Salamo, G. (in press). Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures. Nanoscale, 7(48), https://doi.org/10.1039/c5nr06676j

In this study we report in-plane nanotracks produced by molecular-beam-epitaxy (MBE) exhibiting lateral self-assembly and unusual periodic and out-of-phase height variations across their growth axes. The nanotracks are synthesized using bismuth segre... Read More about Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures.

Detection of anomalous Hall voltages in ultrahigh-mobility two-dimensional hole gases generated by optical spin orientation (2015)
Journal Article
Vasyukov, D. A., Plaut, A. S., Henini, M., Pfeiffer, L. N., West, K. W., Nicoll, C. A., …Ritchie, D. A. (2015). Detection of anomalous Hall voltages in ultrahigh-mobility two-dimensional hole gases generated by optical spin orientation. Physical review B: Condensed matter and materials physics, 91(20), Article 201406. https://doi.org/10.1103/physrevb.91.201406

By combining optical spin orientation and an externally applied longitudinal electric field, transverse charge accumulation has been detected in very high-mobility two-dimensional hole gases by measuring the transverse voltage drop across simple Hall... Read More about Detection of anomalous Hall voltages in ultrahigh-mobility two-dimensional hole gases generated by optical spin orientation.

Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias (2014)
Journal Article
Bansal, K., Henini, M., Alshammari, M. S., & Datta, S. (2014). Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias. Applied Physics Letters, 105(12), Article 123503. https://doi.org/10.1063/1.4896541

We observed qualitatively dissimilar frequency dependence of negative capacitance under high charge injection in two sets of functionally different junction diodes: III-V based light emitting and Si-based non-light emitting diodes. Using an advanced... Read More about Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias.

Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration (2014)
Journal Article
Steele, J., Lewis, R., Henini, M., Lemine, O., Fan, D., Mazur, Y., …Salamo, G. (2014). Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration. Optics Express, 22(10), https://doi.org/10.1364/OE.22.011680

We report room-temperature Raman scattering studies of nominally undoped (100) GaAs1−xBix epitaxial layers exhibiting Biinduced (p-type) longitudinal-optical-plasmon coupled (LOPC) modes for 0.018≤x≤0.048. Redshifts in the GaAs-like optical modes due... Read More about Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration.

Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well (2014)
Conference Proceeding
Herval, L. S., Galeti, H., Orsi Gordo, V., Galvao Gobato, Y., Brasil, M., Taylor, D., & Henini, M. (2014). Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well. In 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro). https://doi.org/10.1109/SBMicro.2014.6940126

In this work, we have investigated magneto-transport and polarization resolved photoluminescence of a GaAs/AlGaAs resonant tunneling diode with Si delta-doping at the center of the quantum well under a magnetic field parallel to the tunnel current. T... Read More about Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well.

Scanning capacitance imaging of compressible and incompressible quantum Hall effect edge strips (2012)
Journal Article
Suddards, M., Baumgartner, A., Henini, M., & Mellor, C. J. (2012). Scanning capacitance imaging of compressible and incompressible quantum Hall effect edge strips. New Journal of Physics, 14, Article 08315. https://doi.org/10.1088/1367-2630/14/8/083015

We use dynamic scanning capacitance microscopy to image compressible and incompressible strips at the edge of a Hall bar in a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime. This method gives access to the complex local c... Read More about Scanning capacitance imaging of compressible and incompressible quantum Hall effect edge strips.