Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well

Herval, L.K S.; Galeti, H.V.A.; Orsi Gordo, V.; Galvao Gobato, Y.; Brasil, M.J.S.P.; Taylor, D.; Henini, M.

Abstract

In this work, we have investigated magneto-transport and polarization resolved photoluminescence of a GaAs/AlGaAs resonant tunneling diode with Si delta-doping at the center of the quantum well under a magnetic field parallel to the tunnel current. Three resonant peaks were observed in the current-voltage characteristics curve (J(V)) which were associated to donor-assisted resonant tunneling, electron resonant tunneling and to phonon-­assisted resonant tunneling. The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affect the spin-polarization of carriers in the well. The quantum well photoluminescence shows strong circular polarization degrees with values up to 85% under 15T at the donor assisted resonant tunneling peak voltage. Our results can be exploited for future development of voltage-controlled spintronics devices.

Citation

Herval, L. S., Galeti, H., Orsi Gordo, V., Galvao Gobato, Y., Brasil, M., Taylor, D., & Henini, M. Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well. Presented at 29th Symposium on Microelectronics Technology and Devices (SBMicro) 2014

• Conference Name: 29th Symposium on Microelectronics Technology and Devices (SBMicro) 2014
• End Date: Sep 5, 2014
• Publication Date: Jan 1, 2014
• Deposit Date: Aug 14, 2015
• Publicly Available Date: Aug 14, 2015
• Peer Reviewed: Peer Reviewed
• Book Title: 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)
• DOI: https://doi.org/10.1109/SBMicro.2014.6940126
• Keywords: spintronics, nanostructure, resonant tunneling diodes, photoluminescence
• Public URL: https://nottingham-repository.worktribe.com/output/998809
• Publisher URL: http://dx.doi.org/10.1109/SBMicro.2014.6940126
• Additional Information: Published in: IEEE proceedings of 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro 2014). IEEE. 2015. ISBN 9781479946952, pp. 220. doi: 10.1109/SBMicro.2014.6940126