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Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well

Herval, L.K S.; Galeti, H.V.A.; Orsi Gordo, V.; Galvao Gobato, Y.; Brasil, M.J.S.P.; Taylor, D.; Henini, M.

Authors

L.K S. Herval

H.V.A. Galeti

V. Orsi Gordo

Y. Galvao Gobato

M.J.S.P. Brasil

D. Taylor

M. Henini



Abstract

In this work, we have investigated magneto-transport and polarization resolved photoluminescence of a GaAs/AlGaAs resonant tunneling diode with Si delta-doping at the center of the quantum well under a magnetic field parallel to the tunnel current. Three resonant peaks were observed in the current-voltage characteristics curve (J(V)) which were associated to donor-assisted resonant tunneling, electron resonant tunneling and to phonon-­assisted resonant tunneling. The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affect the spin-polarization of carriers in the well. The quantum well photoluminescence shows strong circular polarization degrees with values up to 85% under 15T at the donor assisted resonant tunneling peak voltage. Our results can be exploited for future development of voltage-controlled spintronics devices.

Publication Date Jan 1, 2014
Peer Reviewed Peer Reviewed
Book Title 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)
APA6 Citation Herval, L. S., Galeti, H., Orsi Gordo, V., Galvao Gobato, Y., Brasil, M., Taylor, D., & Henini, M. (2014). Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well. In 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)doi:10.1109/SBMicro.2014.6940126
DOI https://doi.org/10.1109/SBMicro.2014.6940126
Keywords spintronics, nanostructure, resonant tunneling diodes, photoluminescence
Publisher URL http://dx.doi.org/10.1109/SBMicro.2014.6940126
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf
Additional Information Published in: IEEE proceedings of 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro 2014). IEEE. 2015. ISBN 9781479946952, pp. 220. doi: 10.1109/SBMicro.2014.6940126

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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