L.K S. Herval
Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well
Herval, L.K S.; Galeti, H.V.A.; Orsi Gordo, V.; Galvao Gobato, Y.; Brasil, M.J.S.P.; Taylor, D.; Henini, M.
Authors
H.V.A. Galeti
V. Orsi Gordo
Y. Galvao Gobato
M.J.S.P. Brasil
D. Taylor
M. Henini
Abstract
In this work, we have investigated magneto-transport and polarization resolved photoluminescence of a GaAs/AlGaAs resonant tunneling diode with Si delta-doping at the center of the quantum well under a magnetic field parallel to the tunnel current. Three resonant peaks were observed in the current-voltage characteristics curve (J(V)) which were associated to donor-assisted resonant tunneling, electron resonant tunneling and to phonon-assisted resonant tunneling. The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affect the spin-polarization of carriers in the well. The quantum well photoluminescence shows strong circular polarization degrees with values up to 85% under 15T at the donor assisted resonant tunneling peak voltage. Our results can be exploited for future development of voltage-controlled spintronics devices.
Citation
Herval, L. S., Galeti, H., Orsi Gordo, V., Galvao Gobato, Y., Brasil, M., Taylor, D., & Henini, M. (2014). Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well. In 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro). https://doi.org/10.1109/SBMicro.2014.6940126
Conference Name | 29th Symposium on Microelectronics Technology and Devices (SBMicro) 2014 |
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End Date | Sep 5, 2014 |
Publication Date | Jan 1, 2014 |
Deposit Date | Aug 14, 2015 |
Publicly Available Date | Mar 28, 2024 |
Peer Reviewed | Peer Reviewed |
Book Title | 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro) |
DOI | https://doi.org/10.1109/SBMicro.2014.6940126 |
Keywords | spintronics, nanostructure, resonant tunneling diodes, photoluminescence |
Public URL | https://nottingham-repository.worktribe.com/output/998809 |
Publisher URL | http://dx.doi.org/10.1109/SBMicro.2014.6940126 |
Additional Information | Published in: IEEE proceedings of 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro 2014). IEEE. 2015. ISBN 9781479946952, pp. 220. doi: 10.1109/SBMicro.2014.6940126 |
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