@inproceedings { , title = {Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well}, abstract = {In this work, we have investigated magneto-transport and polarization resolved photoluminescence of a GaAs/AlGaAs resonant tunneling diode with Si delta-doping at the center of the quantum well under a magnetic field parallel to the tunnel current. Three resonant peaks were observed in the current-voltage characteristics curve (J(V)) which were associated to donor-assisted resonant tunneling, electron resonant tunneling and to phonon-­assisted resonant tunneling. The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affect the spin-polarization of carriers in the well. The quantum well photoluminescence shows strong circular polarization degrees with values up to 85\% under 15T at the donor assisted resonant tunneling peak voltage. Our results can be exploited for future development of voltage-controlled spintronics devices.}, conference = {29th Symposium on Microelectronics Technology and Devices (SBMicro) 2014}, doi = {10.1109/SBMicro.2014.6940126}, organization = {Aracaju-Sergipe, Brazil}, publicationstatus = {Published}, url = {https://nottingham-repository.worktribe.com/output/998809}, keyword = {spintronics, nanostructure, resonant tunneling diodes, photoluminescence}, year = {2014}, author = {Herval, L.K S. and Galeti, H.V.A. and Orsi Gordo, V. and Galvao Gobato, Y. and Brasil, M.J.S.P. and Taylor, D. and Henini, M.} }