All Outputs (12)

1.2 kV SiC Wirebond-Less Integrated Low Inductance Module for Automotive Application (2023)
Conference Proceeding

In this paper, a 1.2 kV wirebond-less Silicon Carbide (SiC) Intelligent Power Module (IPM) designed for automotive applications is presented. This IPM includes integrated decoupling capacitors and gate drivers. By utilizing Printed Circuit Board (PCB... Read More about 1.2 kV SiC Wirebond-Less Integrated Low Inductance Module for Automotive Application.

IEEE VTS Motor Vehicles Challenge 2024 - Energy and Powertrain Losses Management of an e-Racing Vehicle (2023)
Conference Proceeding

Motor Vehicle Challenge, supported by IEEE Vehicular Technology Society, is an annual activity to find an appropriate energy management strategy to improve electric vehicles’ performance. In Challenge 2024, power losses and efficiency of power conver... Read More about IEEE VTS Motor Vehicles Challenge 2024 - Energy and Powertrain Losses Management of an e-Racing Vehicle.

Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances (2023)
Conference Proceeding

This paper presents a behavioural silicon carbide (SiC) IGBT model that utilizes voltage and current dependent capacitances to simulate its switching characteristics, and a voltage dependent current source to simulate the static characteristics. The... Read More about Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances.

N-level GaN Transistor Model for Fast Simulation of Electric Vehicle based Power Electronics Systems (2023)
Conference Proceeding

Accurate and fast power loss estimation models based on a good understanding of the occuring loss mechanisms are crucial to achieve high efficiency, high power density and to take full advantage of the superior characteristics of Gallium Nitride (GaN... Read More about N-level GaN Transistor Model for Fast Simulation of Electric Vehicle based Power Electronics Systems.

An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients (2022)
Conference Proceeding

Accurate switching transients modelling is important for SiC power converter layout optimisation. A SiC-MOSFET manufacturer model is used as a reference. Although the manufacturer model correctly represents device output and capacitance characteristi... Read More about An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients.

Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region (2022)
Conference Proceeding

A new method is proposed in this paper to investigate the influence of current collapse effect on the Id-Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge circuit. The measured Id-Vds characteristics with and witho... Read More about Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region.

A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field (2018)
Conference Proceeding

While wide-bandgap devices offer many benefits, they also bring new challenges for designers. In particular, the new 10 kV silicon carbide (SiC) MOSFETs can switch higher voltages faster and with lower losses than silicon devices while also being sma... Read More about A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field.

Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool (2017)
Conference Proceeding

Using virtual prototyping (VP) design tool to eval¬uate power converter electro-thermal performance can help designers to validate prototype in a quick way. However, different system time-scale requires efficient electro-thermal simulation techniques... Read More about Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool.

SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions (2016)
Conference Proceeding

SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change whe... Read More about SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions.

SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation (2016)
Conference Proceeding

SiC and GaN power transistors conduction loss and switching losses are compared in this paper. In order to compare performance of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses... Read More about SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation.

Developing power semiconductor device model for virtual prototyping of power electronics systems (2016)
Conference Proceeding

Virtual prototyping (VP) is very important for power electronics systems design. A virtual prototyping design tool based on different modelling technology and model order reduction is proposed in the paper. In order to combine circuit electromagnetic... Read More about Developing power semiconductor device model for virtual prototyping of power electronics systems.

GaN-HEMT dynamic ON-state resistance characterisation and modelling (2016)
Conference Proceeding

GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based... Read More about GaN-HEMT dynamic ON-state resistance characterisation and modelling.