Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region

Lu, Xuyang; Videt, Arnaud; Li, Ke; Idir, Nadir; al., et

Abstract

A new method is proposed in this paper to investigate the influence of current collapse effect on the Id−Vds characteristics of GaN-HEMTs in high voltage region based on a modified H-bridge circuit. The measured Id−Vds characteristics with and without the Vds bias are compared, which shows the effect of charge trapping due to the Vds bias on device Id−Vds characteristics in saturation region. These data will be used for a device model including the current collapse effect in full Id−Vds region.

Citation

Lu, X., Videt, A., Li, K., Idir, N., & al., E. (2022, September). Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region. Presented at 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), Hanover, Germany

• Presentation Conference Type: Edited Proceedings
• Conference Name: 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)
• Start Date: Sep 5, 2022
• End Date: Sep 9, 2022
• Acceptance Date: Jun 1, 2022
• Online Publication Date: Oct 17, 2022
• Publication Date: Sep 9, 2022
• Deposit Date: Nov 1, 2023
• Publicly Available Date: Jan 15, 2024
• Publisher: Institute of Electrical and Electronics Engineers
• Peer Reviewed: Peer Reviewed
• Pages: 3822-3830
• Book Title: 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)
• ISBN: 9781665487009
• Public URL: https://nottingham-repository.worktribe.com/output/26803316
• Publisher URL: https://ieeexplore.ieee.org/abstract/document/9907581