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Luminescence and Crystalline Properties of InGaN-based LED on Si Substrate with AlN/GaN Superlattice Structure (2021)
Journal Article

A crack-free indium gallium nitride (InGaN) based light emitting diode (LED) grown on silicon (Si) substrate was successfully demonstrated by introducing aluminium nitride/gallium nitride (AlN/GaN) superlattice structure (SLS) in the growth of the LE... Read More about Luminescence and Crystalline Properties of InGaN-based LED on Si Substrate with AlN/GaN Superlattice Structure.

Nondestructive Picosecond Ultrasonic Probing of Intralayer and van der Waals Interlayer Bonding in α- and β-In2Se3 (2021)
Journal Article

The interplay between the strong intralayer covalent-ionic bonds and the weak interlayer van der Waals (vdW) forces between the neighboring layers of vdW crystals gives rise to unique physical and chemical properties. Here, the intralayer and interla... Read More about Nondestructive Picosecond Ultrasonic Probing of Intralayer and van der Waals Interlayer Bonding in α- and β-In2Se3.

Large non-thermal contribution to picosecond strain pulse generation using the photo-induced phase transition in VO2 (2020)
Journal Article

Picosecond strain pulses are a versatile tool for investigation of mechanical properties of meso-and nano-scale objects with high temporal and spatial resolutions. Generation of such pulses is traditionally realized via ultrafast laser excitation of... Read More about Large non-thermal contribution to picosecond strain pulse generation using the photo-induced phase transition in VO2.

High-Frequency Elastic Coupling at the Interface of van der Waals Nanolayers Imaged by Picosecond Ultrasonics (2019)
Journal Article

Although the topography of van de Waals (vdW) layers and heterostructures can be imaged by scanning probe microscopy, high-frequency interface elastic properties are more difficult to assess. These can influence the stability, reliability and perform... Read More about High-Frequency Elastic Coupling at the Interface of van der Waals Nanolayers Imaged by Picosecond Ultrasonics.

Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN (2017)
Journal Article

Currently there is a high level of interest in the development of ultraviolet (UV) light sources for solid state lighting, optical sensors, surface decontamination and water purification. III-V semiconductor UV LEDs are now successfully manufactured... Read More about Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN.

Piezoelectric response to coherent longitudinal and transverse acoustic phonons in a semiconductor Schottky diode (2017)
Journal Article

We study the generation of microwave electronic signals by pumping a (311) GaAs Schottky diode with compressive and shear acoustic phonons, generated by femtosecond optical excitation of an Al _lm transducer and mode conversion at the Al-GaAs interfa... Read More about Piezoelectric response to coherent longitudinal and transverse acoustic phonons in a semiconductor Schottky diode.