A high electron mobility phonotransistor

Poyser, Caroline L.; Li, Lianhe H.; Campion, Richard P.; Akimov, Andrey V.; Linfield, Edmund H.; Davies, A. Giles; Cunningham, John E.; Kent, Anthony J.

Abstract

Acoustoelectric devices convert acoustic energy to electrical energy and vice versa. Devices working at much higher acoustic frequencies than those currently available have potential scientific and technological applications, e.g.: as detectors in phononics experiments and as transducers in bulk acoustic wave filters at terahertz (THz) frequencies. Here we demonstrated an active acoustoelectronic device based on a GaAs heterostructure: an acoustically gated transistor, or phonotransistor. Instead of being controlled in the conventional manner by an electrical signal applied to a metallic or semiconductor gate as in a high electron mobility transistor (HEMT), the drain-source current was controlled by a bulk sub-THz acoustic wave passing through the channel in a direction perpendicular to the current flow.

Citation

Poyser, C. L., Li, L. H., Campion, R. P., Akimov, A. V., Linfield, E. H., Davies, A. G., …Kent, A. J. (2018). A high electron mobility phonotransistor. Communications Physics, 1, 1-7. https://doi.org/10.1038/s42005-018-0059-7

• Journal Article Type: Article
• Acceptance Date: Aug 24, 2018
• Online Publication Date: Sep 28, 2018
• Publication Date: Sep 28, 2018
• Deposit Date: Sep 5, 2018
• Publicly Available Date: Sep 28, 2018
• Electronic ISSN: 2399-3650
• Publisher: Nature Publishing Group
• Peer Reviewed: Peer Reviewed
• Volume: 1
• Article Number: 59
• Pages: 1-7
• DOI: https://doi.org/10.1038/s42005-018-0059-7
• Public URL: https://nottingham-repository.worktribe.com/output/1061165
• Publisher URL: https://www.nature.com/articles/s42005-018-0059-7
• Contract Date: Sep 28, 2018