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Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN

Eßer, F.; Winner, S.; Patanè, Amalia; Helm, M.; Schneider, H.

Authors

F. Eßer

S. Winner

Amalia Patanè

M. Helm

H. Schneider



Abstract

We use time-resolved photoluminescence (PL) spectroscopy to study the recombination dynamics in Si-doped GaAsN semiconductor alloys with a nitrogen content up to 0.2%. The PL decay is predominantly monoexponential and exhibits a strong energy dispersion. We find ultra-short decay times on the high-energy side and long decay times on the low-energy side of the photoluminescence spectrum. This asymmetry can be explained by the existence of an additional non-radiative energy transfer channel and is consistent with previous studies on intrinsic GaAsN epilayers. However, the determined maximum decay times of GaAsN:Si are significantly reduced in comparison to undoped GaAsN. The determined excitonic mobility edge energy constantly decreases with an increase in the N content, in agreement with the two-level band anticrossing model.

Journal Article Type Article
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 109
Issue 18
Article Number 182113
APA6 Citation Eßer, F., Winner, S., Patanè, A., Helm, M., & Schneider, H. (in press). Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN. Applied Physics Letters, 109(18), doi:10.1063/1.4966949
DOI https://doi.org/10.1063/1.4966949
Publisher URL http://aip.scitation.org/doi/10.1063/1.4966949
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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