@article { , title = {Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN}, abstract = {We use time-resolved photoluminescence (PL) spectroscopy to study the recombination dynamics in Si-doped GaAsN semiconductor alloys with a nitrogen content up to 0.2\%. The PL decay is predominantly monoexponential and exhibits a strong energy dispersion. We find ultra-short decay times on the high-energy side and long decay times on the low-energy side of the photoluminescence spectrum. This asymmetry can be explained by the existence of an additional non-radiative energy transfer channel and is consistent with previous studies on intrinsic GaAsN epilayers. However, the determined maximum decay times of GaAsN:Si are significantly reduced in comparison to undoped GaAsN. The determined excitonic mobility edge energy constantly decreases with an increase in the N content, in agreement with the two-level band anticrossing model.}, doi = {10.1063/1.4966949}, eissn = {1077-3118}, issn = {0003-6951}, issue = {18}, journal = {Applied Physics Letters}, publicationstatus = {Published}, publisher = {American Institute of Physics}, url = {https://nottingham-repository.worktribe.com/output/830166}, volume = {109}, author = {Eßer, F. and Winner, S. and Patanè, Amalia and Helm, M. and Schneider, H.} }