Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN

E�er, F.; Winner, S.; Patan�, Amalia; Helm, M.; Schneider, H.

Abstract

We use time-resolved photoluminescence (PL) spectroscopy to study the recombination dynamics in Si-doped GaAsN semiconductor alloys with a nitrogen content up to 0.2%. The PL decay is predominantly monoexponential and exhibits a strong energy dispersion. We find ultra-short decay times on the high-energy side and long decay times on the low-energy side of the photoluminescence spectrum. This asymmetry can be explained by the existence of an additional non-radiative energy transfer channel and is consistent with previous studies on intrinsic GaAsN epilayers. However, the determined maximum decay times of GaAsN:Si are significantly reduced in comparison to undoped GaAsN. The determined excitonic mobility edge energy constantly decreases with an increase in the N content, in agreement with the two-level band anticrossing model.

Citation

Eßer, F., Winner, S., Patanè, A., Helm, M., & Schneider, H. (in press). Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN. Applied Physics Letters, 109(18), Article 182113. https://doi.org/10.1063/1.4966949

• Journal Article Type: Article
• Acceptance Date: Oct 21, 2016
• Online Publication Date: Nov 3, 2016
• Deposit Date: Jan 4, 2017
• Publicly Available Date: Jan 4, 2017
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 109
• Issue: 18
• Article Number: 182113
• DOI: https://doi.org/10.1063/1.4966949
• Public URL: https://nottingham-repository.worktribe.com/output/830166
• Publisher URL: http://aip.scitation.org/doi/10.1063/1.4966949
• Contract Date: Jan 4, 2017