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Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN

Authors

F.

S. Winner

M. Helm

H. Schneider



Abstract

We use time-resolved photoluminescence (PL) spectroscopy to study the recombination dynamics in Si-doped GaAsN semiconductor alloys with a nitrogen content up to 0.2%. The PL decay is predominantly monoexponential and exhibits a strong energy dispersion. We find ultra-short decay times on the high-energy side and long decay times on the low-energy side of the photoluminescence spectrum. This asymmetry can be explained by the existence of an additional non-radiative energy transfer channel and is consistent with previous studies on intrinsic GaAsN epilayers. However, the determined maximum decay times of GaAsN:Si are significantly reduced in comparison to undoped GaAsN. The determined excitonic mobility edge energy constantly decreases with an increase in the N content, in agreement with the two-level band anticrossing model.

Citation

Eßer, F., Winner, S., Patanè, A., Helm, M., & Schneider, H. (in press). Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN. Applied Physics Letters, 109(18), Article 182113. https://doi.org/10.1063/1.4966949

Journal Article Type Article
Acceptance Date Oct 21, 2016
Online Publication Date Nov 3, 2016
Deposit Date Jan 4, 2017
Publicly Available Date Jan 4, 2017
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 109
Issue 18
Article Number 182113
DOI https://doi.org/10.1063/1.4966949
Public URL https://nottingham-repository.worktribe.com/output/830166
Publisher URL http://aip.scitation.org/doi/10.1063/1.4966949

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