SiC power MOSFETs performance, robustness and technology maturity

Castellazzi, Alberto; Fayyaz, Asad; Romano, G.; Yang, Li; Riccio, M.; Irace, A.

Abstract

Relatively recently, SiC power MOSFETs have transitioned from being a research exercise to becoming an industrial reality. The potential benefits that can be drawn from this technology in the electrical energy conversion domain have been amply discussed and partly demonstrated. Before their widespread use in the field, the transistors need to be thoroughly investigated and later validated for robustness and longer term stability and reliability. This paper proposes a review of commercial SiC power MOSFETs state-of-the-art characteristics and discusses trends and needs for further technology improvements, as well as device design and engineering advancements to meet the increasing demands of power electronics.

Citation

Castellazzi, A., Fayyaz, A., Romano, G., Yang, L., Riccio, M., & Irace, A. (2016). SiC power MOSFETs performance, robustness and technology maturity. Microelectronics Reliability, 58, https://doi.org/10.1016/j.microrel.2015.12.034

• Journal Article Type: Article
• Acceptance Date: Dec 29, 2015
• Online Publication Date: Feb 13, 2016
• Publication Date: Mar 1, 2016
• Deposit Date: May 18, 2016
• Publicly Available Date: May 18, 2016
• Journal: Microelectronics Reliability
• Print ISSN: 0026-2714
• Electronic ISSN: 0026-2714
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 58
• DOI: https://doi.org/10.1016/j.microrel.2015.12.034
• Keywords: Silicon Carbide (SiC); power MOSFETs; reliability; robustness
• Public URL: https://nottingham-repository.worktribe.com/output/774187
• Publisher URL: http://dx.doi.org/10.1016/j.microrel.2015.12.034
• Contract Date: May 18, 2016