Outputs (10)

Optical Properties of GaAs1?xBix/GaAs Quantum Well Structures Grown by Molecular Beam Epitaxy on (100) and (311)B GaAs Substrates (2018)
Journal Article
Gunes, M., Ukelge, M., Donmez, O., Erol, A., Gumus, C., Alghamdi, H., …Guina, M. (2018). Optical Properties of GaAs1−xBix/GaAs Quantum Well Structures Grown by Molecular Beam Epitaxy on (100) and (311)B GaAs Substrates. Semiconductor Science and Technology, 33(12), Article 124015. https://doi.org/10.1088/1361-6641/aaea2e

In this work, the electronic bandstructure of GaAs1?xBix/GaAs single quantum well (QW) samples grown by molecular beam epitaxy is investigated by photomodulated reflectance (PR) measurements as a function of Bi content (0.0065 ? x ? 0.0215) and subst... Read More about Optical Properties of GaAs1?xBix/GaAs Quantum Well Structures Grown by Molecular Beam Epitaxy on (100) and (311)B GaAs Substrates.

Experimental Detection and Control of Trions and Fermi-Edge Singularity in Single-Barrier GaAs/AlAs/GaAs Heterostructures Using Photocapacitance Spectroscopy (2018)
Journal Article
Bhunia, A., Singh, M. K., Gobato, Y. G., Henini, M., & Datta, S. (2018). Experimental Detection and Control of Trions and Fermi-Edge Singularity in Single-Barrier GaAs/AlAs/GaAs Heterostructures Using Photocapacitance Spectroscopy. Physical Review Applied, 10(4), Article 044043. https://doi.org/10.1103/physrevapplied.10.044043

© 2018 American Physical Society. We show how photocapacitance spectra can probe and manipulate two dimensional excitonic complexes and Fermi-edge singularities as a function of applied bias even at a temperature of 100 K. For lower density regimes (... Read More about Experimental Detection and Control of Trions and Fermi-Edge Singularity in Single-Barrier GaAs/AlAs/GaAs Heterostructures Using Photocapacitance Spectroscopy.

Effect of indium doping on the electrical and structural properties of TiO2 thin films used in MOS devices (2018)
Journal Article
Djeglouf, A., Hamri, D., Teffahi, A., Saidane, A., Al Mashary, F. S., Al Huwayz, M. M., …Alyamani, A. Y. (2019). Effect of indium doping on the electrical and structural properties of TiO2 thin films used in MOS devices. Journal of Alloys and Compounds, 775, 202-213. https://doi.org/10.1016/j.jallcom.2018.10.048

We investigated the effect of Indium (In) doping on the structural and electrical properties of Ti/Au/ TiO2:In/n-Si metal-oxide-semiconductor (MOS) devices. Sputtering grown TiO2 thin films on Si substrate were doped using two In-films with 15 nm and... Read More about Effect of indium doping on the electrical and structural properties of TiO2 thin films used in MOS devices.

Exciton localization and structural disorder of GaAs1?xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates (2018)
Journal Article
Prando, G., Orsi Gordo, V., Puustinen, J., Hilska, J., Alghamdi, H., Som, G., …Guina, M. (2018). Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, 33(8), Article 084002. https://doi.org/10.1088/1361-6641/aad02e

In this work, we have investigated the structural and optical properties of GaAs(1?x)Bix/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311)B substrates using x-ray diffraction, atomic force microscopy, Fourier-transform Ram... Read More about Exciton localization and structural disorder of GaAs1?xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates.

Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2thin films (2018)
Journal Article
Al mashary, F. S., de Castro, S., da Silva, A. F., Felix, J. F., Piton, M. R., Avanço Galeti, H. V., …Alghamdi, F. S. (in press). Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2thin films. Journal of Alloys and Compounds, 766, https://doi.org/10.1016/j.jallcom.2018.06.360

We have investigated the effect of the growth techniques on the structural, the electrically and optically active defects in Indium doped TiO2 thin films grown by pulsed laser deposition (PLD) and sputtering techniques. X-ray diffraction (XRD) and Ra... Read More about Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2thin films.

Revealing the nature of low temperature photoluminescence peaks by laser treatment in van der Waals epitaxially grown WS2 monolayers (2018)
Journal Article
Orsi Gordo, V., Balanta, M., Galvão Gobato, Y., Covre, F., Galeti, H., Iikawa, F., …Huang, C. (in press). Revealing the nature of low temperature photoluminescence peaks by laser treatment in van der Waals epitaxially grown WS2 monolayers. Nanoscale, https://doi.org/10.1039/C8NR00719E

Monolayers of transition metal dichalcogenides (TMD) are promising materials for optoelectronics devices. However, one of the challenges is to fabricate large-scale growth of high quality TMD monolayers with the desired properties in order to expand... Read More about Revealing the nature of low temperature photoluminescence peaks by laser treatment in van der Waals epitaxially grown WS2 monolayers.

?-rays irradiation e?ects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N (2018)
Journal Article
Teffahi, A., Hamri, D., Djeghlouf, A., Abboun Abid, M., Saidane, A., Al Saqri, N., …henini, M. (2018). γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N. Radiation Physics and Chemistry, 147, https://doi.org/10.1016/j.radphyschem.2018.01.029

Dielectric properties of As grown and irradiated Ti /Au/GaAsN Schottky diodes with 1.2%N are investigated using capacitance/conductance-voltage measurements in 90–290 K temperature range and 50–2000 kHz frequency range. Extracted parameters are inter... Read More about ?-rays irradiation e?ects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N.

Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature (2018)
Journal Article
Bhunia, A., Singh, M. K., Galvao Gobato, Y., Henini, M., & Datta, S. (in press). Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature. Journal of Applied Physics, 123(4), Article 044305. https://doi.org/10.1063/1.5007820

We investigated excitonic absorptions in a GaAs/AlAs/GaAs single barrier heterostructure using both photocapacitance and photocurrent spectroscopies at room temperature. Photocapacitance spectra show well defined resonance peaks of indirect excitons... Read More about Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature.

Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes (2018)
Journal Article
Galeti, H., Galvao Gobato, Y., Brasil, M., Taylor, D., & Henini, M. (in press). Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes. Journal of Electronic Materials, 47(3), https://doi.org/10.1007/s11664-018-6065-4

We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias... Read More about Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes.

Influence of reaction time and synthesis temperature on the physical properties of ZnO nanoparticles synthesized by the hydrothermal method (2018)
Journal Article
Wasly, H., Abd El-Sadek, M., & Henini, M. (in press). Influence of reaction time and synthesis temperature on the physical properties of ZnO nanoparticles synthesized by the hydrothermal method. Applied Physics A, 124(76), https://doi.org/10.1007/s00339-017-1482-4

Influence of synthesis temperature and reaction time on the structural and optical properties of ZnO nanoparticles synthesized by the hydrothermal method was investigated using X-ray diffraction (XRD), high resolution transmission electron microscopy... Read More about Influence of reaction time and synthesis temperature on the physical properties of ZnO nanoparticles synthesized by the hydrothermal method.