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Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing (2023)
Journal Article
Shiffa, M., Dewes, B. T., Bradford, J., Cottam, N. D., Cheng, T. S., Mellor, C. J., …Patanè, A. (2024). Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing. Small, 20(7), Article 2305865. https://doi.org/10.1002/smll.202305865

2D semiconductors (2SEM) can transform many sectors, from information and communication technology to healthcare. To date, top‐down approaches to their fabrication, such as exfoliation of bulk crystals by “scotch‐tape,” are widely used, but have limi... Read More about Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing.

Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure (2023)
Journal Article
Dey, A., Cottam, N., Makarovskiy, O., Yan, W., Mišeikis, V., Coletti, C., …Patanè, A. (2023). Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure. Communications Physics, 6, Article 216. https://doi.org/10.1038/s42005-023-01340-8

The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant for compact... Read More about Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure.

A magnetically-induced Coulomb gap in graphene due to electron-electron interactions (2023)
Journal Article
Vdovin, E. E., Greenaway, M. T., Khanin, Y. N., Morozov, S. V., Makarovsky, O., Patanè, A., …Eaves, L. (2023). A magnetically-induced Coulomb gap in graphene due to electron-electron interactions. Communications Physics, 6, Article 159. https://doi.org/10.1038/s42005-023-01277-y

Insights into the fundamental properties of graphene’s Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity... Read More about A magnetically-induced Coulomb gap in graphene due to electron-electron interactions.

Direct Measurements of Anisotropic Thermal Transport in γ-InSe Nanolayers via Cross-Sectional Scanning Thermal Microscopy (2023)
Journal Article
Gonzalez-Munoz, S., Agarwal, K., Castanon, E. G., Kudrynskyi, Z. R., Kovalyuk, Z. D., Spièce, J., …Kolosov, O. V. (2023). Direct Measurements of Anisotropic Thermal Transport in γ-InSe Nanolayers via Cross-Sectional Scanning Thermal Microscopy. Advanced Materials Interfaces, 10(17), Article 2300081. https://doi.org/10.1002/admi.202300081

Van der Waals (vdW) atomically thin materials and their heterostructures offer a versatile platform for the management of nanoscale heat transport and the design of novel thermoelectrics. These require the measurement of highly anisotropic heat trans... Read More about Direct Measurements of Anisotropic Thermal Transport in γ-InSe Nanolayers via Cross-Sectional Scanning Thermal Microscopy.

Graphene FETs with high and low mobilities have universal temperature-dependent properties (2023)
Journal Article
Gosling, J., Morozov, S. V., Vdovin, E. E., Greenaway, M. T., Khanin, Y. N., Kudrynskyi, Z., …Makarovsky, O. (2023). Graphene FETs with high and low mobilities have universal temperature-dependent properties. Nanotechnology, 34(12), Article 125702. https://doi.org/10.1088/1361-6528/aca981

We use phenomenological modelling and detailed experimental studies of charge carrier transport to investigate the dependence of the electrical resistivity,ρ, on gate voltage,Vg, for a series of monolayer graphene field effect transistors with mobili... Read More about Graphene FETs with high and low mobilities have universal temperature-dependent properties.

Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors (2022)
Journal Article
Cottam, N. D., Austin, J. S., Zhang, C., Patanè, A., Escoffier, W., Goiran, M., …Makarovsky, O. (2023). Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors. Advanced Electronic Materials, 9(2), Article 2200995. https://doi.org/10.1002/aelm.202200995

Stable all-inorganic CsPbX3 perovskite nanocrystals (PNCs) with high optical yield can be used in combination with graphene as photon sensors with high responsivity (up to 106 A W−1) in the VIS-UV range. The performance of these perovskite/graphene f... Read More about Magnetic and Electric Field Dependent Charge Transfer in Perovskite/Graphene Field Effect Transistors.

Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions (2022)
Journal Article
Zhu, W., Xie, S., Lin, H., Zhang, G., Wu, H., Hu, T., …Wang, K. (2022). Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions. Chinese Physics Letters, 39(12), Article 128501. https://doi.org/10.1088/0256-307x/39/12/128501

A magnetic tunnel junction (MTJ) is the core component in memory technologies, such as the magnetic random-access memory, magnetic sensors and programmable logic devices. In particular, MTJs based on two-dimensional van der Waals (vdW) heterostructur... Read More about Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions.

Van der Waals interfaces in multilayer junctions for ultraviolet photodetection (2022)
Journal Article
Xie, S., Shiffa, M., Shiffa, M., Kudrynskyi, Z. R., Makarovskiy, O., Kovalyuk, Z. D., …Patanè, A. (2022). Van der Waals interfaces in multilayer junctions for ultraviolet photodetection. npj 2D Materials and Applications, 6(1), Article 61. https://doi.org/10.1038/s41699-022-00338-0

Developments in semiconductor science have led to the miniaturization and improvement of light detection technologies for many applications. However, traditional pn-junctions or three-dimensional device geometries for detection of ultraviolet (UV) li... Read More about Van der Waals interfaces in multilayer junctions for ultraviolet photodetection.

Carrier dynamics in InSe and the impact of terahertz pulses (2022)
Presentation / Conference Contribution
Venanzi, T., Selig, M., Pashkin, A., Winnerl, S., Katzer, M., Arora, H., …Schneider, H. (2022). Carrier dynamics in InSe and the impact of terahertz pulses. In IRMMW-THz 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves Conference Program. https://doi.org/10.1109/IRMMW-THz50927.2022.9895949

We investigate the electron-hole dynamics in few-layer InSe, a van der Waals semiconductor with promising opt-electronic properties. We show that terahertz pulses modulate the spontaneous emission via absorption by photo-excited carriers. We further... Read More about Carrier dynamics in InSe and the impact of terahertz pulses.

Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6 (2022)
Journal Article
Dey, A., Yan, W., Balakrishnan, N., Xie, S., Kudrynskyi, Z. R., Makarovskiy, O., …Patanè, A. (2022). Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6. 2D Materials, 9(3), Article 035003. https://doi.org/10.1088/2053-1583/ac6191

Ferroelectricity at the nanometre scale can drive the miniaturisation and wide application of ferroelectric devices for memory and sensing applications. The two-dimensional van der Waals (2D-vdWs) ferroelectrics CuInP2S6 (CIPS) has attracted much att... Read More about Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6.

Terahertz control of photoluminescence emission in few-layer InSe (2022)
Journal Article
Venanzi, T., Selig, M., Pashkin, A., Winnerl, S., Katzer, M., Arora, H., …Schneider, H. (2022). Terahertz control of photoluminescence emission in few-layer InSe. Applied Physics Letters, 120(9), Article 092104. https://doi.org/10.1063/5.0080784

A promising route for the development of opto-electronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here, we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe us... Read More about Terahertz control of photoluminescence emission in few-layer InSe.

High-Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self-Aligned Contacts (2022)
Journal Article
Liang, G., Wang, Y., Zhang, J., Kudrynskyi, Z. R., Kovalyuk, Z., Patanè, A., …Song, A. (2022). High-Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self-Aligned Contacts. Advanced Electronic Materials, 8(5), Article 2100954. https://doi.org/10.1002/aelm.202100954

2D semiconductors are promising candidates for next generation electronics and optoelectronics. However, their exposure to air and/or resists during device fabrication can cause considerable degradation of material quality, hindering their study and... Read More about High-Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self-Aligned Contacts.

Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions (2021)
Journal Article
Zhu, W., Lin, H., Yan, F., Hu, C., Wang, Z., Zhao, L., …Wang, K. (2021). Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions. Advanced Materials, 33(51), Article 2104658. https://doi.org/10.1002/adma.202104658

2D layered chalcogenide semiconductors have been proposed as a promising class of materials for low-dimensional electronic, optoelectronic, and spintronic devices. Here, all-2D van der Waals vertical spin-valve devices, that combine the 2D layered se... Read More about Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions.

Tunable spin-orbit coupling in two-dimensional InSe (2021)
Journal Article
Ceferino, A., Magorrian, S. J., Zólyomi, V., Bandurin, D. A., Geim, A. K., Patanè, A., …Fal'Ko, V. I. (2021). Tunable spin-orbit coupling in two-dimensional InSe. Physical Review B, 104(12), Article 125432. https://doi.org/10.1103/PhysRevB.104.125432

We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer γ-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and... Read More about Tunable spin-orbit coupling in two-dimensional InSe.

Nondestructive Picosecond Ultrasonic Probing of Intralayer and van der Waals Interlayer Bonding in α- and β-In2Se3 (2021)
Journal Article
Yan, W., Akimov, A. V., Page, J. A., Greenaway, M. T., Balanov, A. G., Patanè, A., & Kent, A. J. (2021). Nondestructive Picosecond Ultrasonic Probing of Intralayer and van der Waals Interlayer Bonding in α- and β-In2Se3. Advanced Functional Materials, 31(50), Article 2106206. https://doi.org/10.1002/adfm.202106206

The interplay between the strong intralayer covalent-ionic bonds and the weak interlayer van der Waals (vdW) forces between the neighboring layers of vdW crystals gives rise to unique physical and chemical properties. Here, the intralayer and interla... Read More about Nondestructive Picosecond Ultrasonic Probing of Intralayer and van der Waals Interlayer Bonding in α- and β-In2Se3.

Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures (2021)
Journal Article
Xie, S., Dey, A., Yan, W., Kudrynskyi, Z. R., Balakrishnan, N., Makarovskiy, O., …Patanè, A. (2021). Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures. 2D Materials, 8(4), Article 045020. https://doi.org/10.1088/2053-1583/ac1ada

The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waa... Read More about Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures.

Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T (2021)
Journal Article
Yang, Z., Wang, X., Felton, J., Kudrynskyi, Z., Gen, M., Nomura, T., …Patanè, A. (2021). Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T. Physical Review B (Condensed Matter), 104(8), Article 085206. https://doi.org/10.1103/PhysRevB.104.085206

The SnSe2(1-x)S2x alloy is a van der Waals semiconductor with versatile, tunable electronic properties and prospects for future applications ranging from electronics to thermoelectrics and superconductivity. Its band structure and carrier effective m... Read More about Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T.

CsPb(Br/I)3Perovskite Nanocrystals for Hybrid GaN-Based High-Bandwidth White Light-Emitting Diodes (2021)
Journal Article
Ma, Z., Li, X., Zhang, C., Turyanska, L., Lin, S., Xi, X., …Zhao, L. (2021). CsPb(Br/I)3Perovskite Nanocrystals for Hybrid GaN-Based High-Bandwidth White Light-Emitting Diodes. ACS Applied Nano Materials, 4(8), 8383-8389. https://doi.org/10.1021/acsanm.1c01604

The modulation bandwidth of white light emitting diodes (LEDs) is an important factor in visible light communication (VLC) system, which is mainly limited by the down-conversion materials. The broad spectrum and long lifetime of conventional light co... Read More about CsPb(Br/I)3Perovskite Nanocrystals for Hybrid GaN-Based High-Bandwidth White Light-Emitting Diodes.

Light-Induced Stark Effect and Reversible Photoluminescence Quenching in Inorganic Perovskite Nanocrystals (2021)
Journal Article
Cottam, N. D., Zhang, C., Wildman, J. L., Patanè, A., Turyanska, L., & Makarovsky, O. (2021). Light-Induced Stark Effect and Reversible Photoluminescence Quenching in Inorganic Perovskite Nanocrystals. Advanced Optical Materials, 9(13), Article 2100104. https://doi.org/10.1002/adom.202100104

Inorganic perovskite nanocrystals (NCs) have demonstrated a number of unique optical and electronic properties for optoelectronic applications. However, the physical properties of these nanostructures, such as the dynamics of charge carriers on diffe... Read More about Light-Induced Stark Effect and Reversible Photoluminescence Quenching in Inorganic Perovskite Nanocrystals.

Universal mobility characteristics of graphene originating from charge scattering by ionised impurities (2021)
Journal Article
Gosling, J. H., Makarovsky, O., Wang, F., Cottam, N. D., Greenaway, M. T., Patanè, A., …Fromhold, T. M. (2021). Universal mobility characteristics of graphene originating from charge scattering by ionised impurities. Communications Physics, 4(1), Article 30. https://doi.org/10.1038/s42005-021-00518-2

Pristine graphene and graphene-based heterostructures can exhibit exceptionally high electron mobility if their surface contains few electron-scattering impurities. Mobility directly influences electrical conductivity and its dependence on the carrie... Read More about Universal mobility characteristics of graphene originating from charge scattering by ionised impurities.

Resonance and antiresonance in Raman scattering in GaSe and InSe crystals (2021)
Journal Article
Osiekowicz, M., Staszczuk, D., Olkowska-Pucko, K., Kipczak, Ł., Grzeszczyk, M., Zinkiewicz, M., …Molas, M. R. (2021). Resonance and antiresonance in Raman scattering in GaSe and InSe crystals. Scientific Reports, 11(1), Article 924. https://doi.org/10.1038/s41598-020-79411-x

The temperature effect on the Raman scattering efficiency is investigated in ε-GaSe and γ-InSe crystals. We found that varying the temperature over a broad range from 5 to 350 K permits to achieve both the resonant conditions and the antiresonance be... Read More about Resonance and antiresonance in Raman scattering in GaSe and InSe crystals.

Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy (2021)
Journal Article
Buckley, D., Kudrynskyi, Z. R., Balakrishnan, N., Vincent, T., Mazumder, D., Castanon, E., …Patanè, A. (2021). Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy. Advanced Functional Materials, 31(11), Article 2008967. https://doi.org/10.1002/adfm.202008967

The ability of a material to conduct heat influences many physical phenomena, ranging from thermal management in nanoscale devices to thermoelectrics. Van der Waals two dimensional (2D) materials offer a versatile platform to tailor heat transfer due... Read More about Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy.

Enhanced Optical Emission from 2D InSe Bent onto Si‐Pillars (2020)
Journal Article
Mazumder, D., Xie, J., Kudrynskyi, Z. R., Wang, X., Makarovsky, O., Bhuiyan, M. A., …Patanè, A. (2020). Enhanced Optical Emission from 2D InSe Bent onto Si‐Pillars. Advanced Optical Materials, 8(18), Article 2000828. https://doi.org/10.1002/adom.202000828

Controlling the propagation and intensity of an optical signal is central to several technologies ranging from quantum communication to signal processing. These require a versatile class of functional materials with tailored electronic and optical pr... Read More about Enhanced Optical Emission from 2D InSe Bent onto Si‐Pillars.

New Polymorphs of 2D Indium Selenide with Enhanced Electronic Properties (2020)
Journal Article
Sun, Y., Li, Y., Li, T., Biswas, K., Patanè, A., & Zhang, L. (2020). New Polymorphs of 2D Indium Selenide with Enhanced Electronic Properties. Advanced Functional Materials, 30(31), Article 2001920. https://doi.org/10.1002/adfm.202001920

The two-dimensional (2D) semiconductor indium selenide (InSe) has attracted significant interest due its unique electronic band structure, high electron mobility and wide tunability of its band gap energy achieved by varying the layer thickness. All... Read More about New Polymorphs of 2D Indium Selenide with Enhanced Electronic Properties.

Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction (2020)
Journal Article
Berenguer, F., Pettinari, G., Felici, M., Balakrishnan, N., Clark, J. N., Ravy, S., …Ciatto, G. (2020). Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction. Communications Materials, 1, Article 19. https://doi.org/10.1038/s43246-020-0021-6

Coherent x-ray diffractive imaging is a nondestructive technique that extracts three-dimensional electron density and strain maps from materials with nanometer resolution. It has been utilized for materials in a range of applications, and has signifi... Read More about Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction.

Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunnelling diode (2020)
Journal Article
Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M., Makarovsky, O., Krier, A., & Patanè, A. (2020). Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunnelling diode. Applied Physics Letters, 116(14), Article 142108. https://doi.org/10.1063/5.0002407

Light emitting diodes (LEDs) in the mid-infrared (MIR) spectral range require material systems with tailored optical absorption and emission at wavelengths λ > 2 μm. Here, we report on MIR LEDs based on In(AsN)/(InAl)As resonant tunneling diodes (RTD... Read More about Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunnelling diode.

Photoluminescence dynamics in few-layer InSe (2020)
Journal Article
Venanzi, T., Arora, H., Winnerl, S., Pashkin, A., Chava, P., Patane, A., …Schneider, H. (2020). Photoluminescence dynamics in few-layer InSe. Physical Review Materials, 4(4), Article 044001. https://doi.org/10.1103/PhysRevMaterials.4.044001

We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL lineshape, we dis... Read More about Photoluminescence dynamics in few-layer InSe.

High Responsivity and Wavelength Selectivity of GaN‐Based Resonant Cavity Photodiodes (2020)
Journal Article
Li, J., Yang, C., Liu, L., Cao, H., Lin, S., Xi, X., …Zhao, L. (2020). High Responsivity and Wavelength Selectivity of GaN‐Based Resonant Cavity Photodiodes. Advanced Optical Materials, 8(7), Article 1901276. https://doi.org/10.1002/adom.201901276

The implementation of blue-light photodiodes based on InGaN in emerging technologies, such as free-space visible light communication (VLC), requires transformative approaches towards enhanced performance, miniaturization, and integration beyond curre... Read More about High Responsivity and Wavelength Selectivity of GaN‐Based Resonant Cavity Photodiodes.

Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors (2020)
Journal Article
Lv, Q., Yan, F., Mori, N., Zhu, W., Hu, C., Kudrynskyi, Z. R., …Wang, K. (2020). Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors. Advanced Functional Materials, 30(15), Article 1910713. https://doi.org/10.1002/adfm.201910713

© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field-effect transistors (TFETs) that exploit the tunneling of charge carriers across the fo... Read More about Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors.

Design of van der Waals interfaces for broad-spectrum optoelectronics (2020)
Journal Article
Ubrig, N., Ponomarev, E., Zultak, J., Domaretskiy, D., Zólyomi, V., Terry, D., …Morpurgo, A. F. (2020). Design of van der Waals interfaces for broad-spectrum optoelectronics. Nature Materials, 19, 299-304. https://doi.org/10.1038/s41563-019-0601-3

Van der Waals (vdW) interfaces based on 2D materials are promising for optoelectronics, as interlayer transitions between different compounds allow tailoring of the spectral response over a broad range. However, issues such as lattice mismatch or a s... Read More about Design of van der Waals interfaces for broad-spectrum optoelectronics.

Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction (2020)
Journal Article
Kudrynskyi, Z. R., Wang, X., Sutcliffe, J., Bhuiyan, M. A., Fu, Y., Yang, Z., …Patanè, A. (2020). Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction. Advanced Functional Materials, 30(9), Article 1908092. https://doi.org/10.1002/adfm.201908092

The design of advanced functional materials with customized properties often requires the use of an alloy. This approach has been used for decades, but only recently to create van der Waals (vdW) alloys for applications in electronics, optoelectronic... Read More about Van der Waals SnSe2(1-x)S2x alloys: composition-dependent bowing coefficient and electron-phonon interaction.

Defect-assisted high photoconductive UV-VIS gain in perovskite-decorated graphene transistors (2019)
Journal Article
Cottam, N. D., Zhang, C., Turyanska, L., Eaves, L., Kudrynskyi, Z., Vdovin, E. E., …Makarovsky, O. (2020). Defect-assisted high photoconductive UV-VIS gain in perovskite-decorated graphene transistors. ACS Applied Electronic Materials, 2, 147-154. https://doi.org/10.1021/acsaelm.9b00664

Recent progress in the synthesis of high stability inorganic perovskite nanocrystals (NCs) has led to their increasing use in broadband photodetectors. These NCs are of particular interest for the UV range as they have the potential to extend the wav... Read More about Defect-assisted high photoconductive UV-VIS gain in perovskite-decorated graphene transistors.

High-Frequency Elastic Coupling at the Interface of van der Waals Nanolayers Imaged by Picosecond Ultrasonics (2019)
Journal Article
Greener, J. D., de Lima Savi, E., Akimov, A. V., Raetz, S., Kudrynskyi, Z., Kovalyuk, Z. D., …Gusev, V. E. (2019). High-Frequency Elastic Coupling at the Interface of van der Waals Nanolayers Imaged by Picosecond Ultrasonics. ACS Nano, 13(10), 11530-11537. https://doi.org/10.1021/acsnano.9b05052

Although the topography of van de Waals (vdW) layers and heterostructures can be imaged by scanning probe microscopy, high-frequency interface elastic properties are more difficult to assess. These can influence the stability, reliability and perform... Read More about High-Frequency Elastic Coupling at the Interface of van der Waals Nanolayers Imaged by Picosecond Ultrasonics.

Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials (2019)
Journal Article
Sreepal, V., Yagmurcukardes, M., Vasu, K. S., Kelly, D. J., Taylor, S. F. R., Kravets, V. G., …Nair, R. R. (2019). Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials. Nano Letters, 19(9), 6475-6481. https://doi.org/10.1021/acs.nanolett.9b02700

Most of the studied two-dimensional (2D) materials have been obtained by exfoliation of van der Waals crystals. Recently, there has been growing interest in fabricating synthetic 2D crystals which have no layered bulk analogues. These efforts have be... Read More about Two-Dimensional Covalent Crystals by Chemical Conversion of Thin van der Waals Materials.

Schottky-barrier thin-film transistors based on HfO2-capped InSe (2019)
Journal Article
Wang, Y., Zhang, J., Liang, G., Shi, Y., Zhang, Y., Kudrynskyi, Z. R., …Song, A. (2019). Schottky-barrier thin-film transistors based on HfO2-capped InSe. Applied Physics Letters, 115(3), Article 033502. https://doi.org/10.1063/1.5096965

© 2019 Author(s). Indium selenide (InSe) is an emerging two-dimensional semiconductor and a promising candidate for next generation thin film transistors (TFTs). Here, we report on Schottky barrier TFTs (SB-TFTs) in which a 0.9-nm-thick HfO2 dielectr... Read More about Schottky-barrier thin-film transistors based on HfO2-capped InSe.

Enhanced photoresponse in MoTe2 photodetectors with asymmetric graphene contacts (2019)
Journal Article
Wei, X., Yan, F., Lv, Q., Zhu, W., Hu, C., Patane, A., & Wang, K. (2019). Enhanced photoresponse in MoTe2 photodetectors with asymmetric graphene contacts. Advanced Optical Materials, 7(12), Article 1900190. https://doi.org/10.1002/adom.201900190

Atomically thin two dimensional (2D) materials are promising candidates for miniaturized high-performance optoelectronic devices. Here, we report on multilayer MoTe2 photodetectors contacted with asymmetric electrodes based on n- and p-type graphene... Read More about Enhanced photoresponse in MoTe2 photodetectors with asymmetric graphene contacts.

Formation and healing of defects in atomically thin GaSe and InSe (2019)
Journal Article
Hopkinson, D. G., Zólyomi, V., Rooney, A. P., Clark, N., Terry, D. J., Hamer, M., …Haigh, S. J. (2019). Formation and healing of defects in atomically thin GaSe and InSe. ACS Nano, 13(5), 5112-5123. https://doi.org/10.1021/acsnano.8b08253

© 2019 American Chemical Society. Two dimensional III-VI metal monochalcogenide materials, such as GaSe and InSe, are attracting considerable attention due to their promising electronic and optoelectronic properties. Here, an investigation of point a... Read More about Formation and healing of defects in atomically thin GaSe and InSe.

Tunnel spectroscopy of localised electronic states in hexagonal boron nitride (2018)
Journal Article
Patanè, A., Mishchenko, A., Greenaway, M., Vdovin, E., Ghazaryan, D., Misra, A., …Eaves, L. (2018). Tunnel spectroscopy of localised electronic states in hexagonal boron nitride. Communications Physics, 1(1), Article 94. https://doi.org/10.1038/s42005-018-0097-1

Hexagonal boron nitride is a large band gap layered crystal, frequently incorporated in van der Waals heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applicat... Read More about Tunnel spectroscopy of localised electronic states in hexagonal boron nitride.

Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures (2018)
Journal Article
Bhuiyan, M. A., Kudrynskyi, Z. R., Mazumder, D., Greener, J. D., Makarovsky, O., Mellor, C. J., …Patanè, A. (2019). Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures. Advanced Functional Materials, 29(3), Article 1805491. https://doi.org/10.1002/adfm.201805491

The transfer of electronic charge across the interface of two van der Waals crystals can underpin the operation of a new class of functional devices. Amongst van der Waals semiconductors, an exciting and rapidly growing development involves the “post... Read More about Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures.

Coherent acoustic phonons in van der Waals nanolayers and heterostructures (2018)
Journal Article
Greener, J. D., Akimov, A. V., Gusev, V., Kudrynskyi, Z., Beton, P. H., Kovalyuk, Z. D., …Patanè, A. (2018). Coherent acoustic phonons in van der Waals nanolayers and heterostructures. Physical Review B, 98(7), Article 075408. https://doi.org/10.1103/PhysRevB.98.075408

Terahertz (THz) and sub-THz coherent acoustic phonons have been successfully used as probes of various quantum systems. Since their wavelength is in the nanometer range, they can probe nanostructures buried below a surface with nanometer resolution a... Read More about Coherent acoustic phonons in van der Waals nanolayers and heterostructures.

Magnetotransport and lateral confinement in an InSe van der Waals heterostructure (2018)
Journal Article
Lee, Y., Pisoni, R., Overweg, H., Eich, M., Rickhaus, P., Patane, A., …Ensslin, K. (2018). Magnetotransport and lateral confinement in an InSe van der Waals heterostructure. 2D Materials, 5(3), Article 035040. https://doi.org/10.1088/2053-1583/aacb49

In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the c... Read More about Magnetotransport and lateral confinement in an InSe van der Waals heterostructure.

Improved performance of InSe field-effect transistors by channel encapsulation (2018)
Journal Article
Liang, G., Wang, Y., Han, L., Yang, Z.-X., Xin, Q., Kudrynskyi, Z. R., …Song, A. (2018). Improved performance of InSe field-effect transistors by channel encapsulation. Semiconductor Science and Technology, 33(6), Article 06LT01. https://doi.org/10.1088/1361-6641/aab62b

Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics and optoelectronics. In particular, in contrast to many high-mobility two-dimensional (2D) materials, such as phosp... Read More about Improved performance of InSe field-effect transistors by channel encapsulation.

Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures (2018)
Journal Article
Hamer, M. J., Tovari, E., Zhu, M., Thompson, M., Mayorov, A., Prance, J., …Gorbachev, R. (2018). Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures. Nano Letters, 18(6), 3950-3955. https://doi.org/10.1021/acs.nanolett.8b01376

© Copyright 2018 American Chemical Society. Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attr... Read More about Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures.

Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal (2017)
Journal Article
Kudrynskyi, Z. R., Bhuiyan, M. A., Makarovsky, O., Greener, J. D., Vdovin, E. E., Kovalyuk, Z. D., …Patanè, A. (2017). Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal. Physical Review Letters, 119(15), Article 157701. https://doi.org/10.1103/PhysRevLett.119.157701

© 2017 authors. Published by the American Physical Society. We report on a "giant" quantum Hall effect plateau in a graphene-based field-effect transistor where graphene is capped by a layer of the van der Waals crystal InSe. The giant quantum Hall e... Read More about Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal.

Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures (2017)
Journal Article
Yan, F., Zhao, L., Patanè, A., Hu, P., Wei, X., Luo, W., …Wang, K. (2017). Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures. Nanotechnology, 28(27), Article 27LT01. https://doi.org/10.1088/1361-6528/aa749e

The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for high performance opto-electronic devices such as photodetectors and light sources. Here we report on the... Read More about Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures.

High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN (2017)
Journal Article
Liu, L., Yang, C., Patanè, A., Yu, Z., Yan, F., Wang, K., …Zhao, L. (2017). High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN. Nanoscale, 24, https://doi.org/10.1039/c7nr01290j

Photodetectors for the ultraviolet (UV) range of the electromagnetic spectrum are in great demand for several technologies, but require the development of novel device structures and materials. Here we report on the high detectivity of UV photodetect... Read More about High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN.

The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals (2016)
Journal Article
Mudd, G., Molas, M., Chen, X., Zólyomi, V., Nogajewski, K., Kudrynskyi, Z. R., …Patanè, A. (2016). The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals. Scientific Reports, 6(1), Article 39619. https://doi.org/10.1038/srep39619

The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on the composition, thickness and stacking of the component layers. Here we use density functional theory and high field magneto-optics to investigate th... Read More about The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals.

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe (2016)
Journal Article
Bandurin, D. A., Tyurnina, A. V., Yu, G. L., Mishchenko, A., Zólyomi, V., Morozov, S. V., …Cao, Y. (2017). High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. Nature Nanotechnology, 12(3), 223-227. https://doi.org/10.1038/nnano.2016.242

© 2017 Macmillan Publishers Limited, part of Springer Nature. All rights reserved. A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These dif... Read More about High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe.

Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN (2016)
Journal Article
Eßer, F., Winner, S., Patanè, A., Helm, M., & Schneider, H. (in press). Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN. Applied Physics Letters, 109(18), Article 182113. https://doi.org/10.1063/1.4966949

We use time-resolved photoluminescence (PL) spectroscopy to study the recombination dynamics in Si-doped GaAsN semiconductor alloys with a nitrogen content up to 0.2%. The PL decay is predominantly monoexponential and exhibits a strong energy dispers... Read More about Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN.

Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire (2016)
Journal Article
Beardsley, R., Akimov, A. V., Greener, J. D., Mudd, G. W., Sandeep, S., Kudrynskyi, Z. R., …Kent, A. J. (2016). Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire. Scientific Reports, 6, https://doi.org/10.1038/srep26970

Van der Waals (vdW) layered crystals and heterostructures have attracted substantial interest for potential applications in a wide range of emerging technologies. An important, but often overlooked, consideration in the development of implementable d... Read More about Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire.

High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures (2015)
Journal Article
Mudd, G. W., Svatek, S. A., Hague, L., Makarovsky, O., Kudrynskyi, Z. R., Mellor, C. J., …Patanè, A. (2015). High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures. Advanced Materials, 27(25), 3760-3766. https://doi.org/10.1002/adma.201500889

We exploit the broad-band transparency of graphene and the favorable band line up of graphene with van der Waals InSe crystals to create new functional heterostructures and high-performance photodetectors. The InSe-graphene heterostructure exhibits a... Read More about High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures.

Subterahertz chaos generation by coupling a superlattice to a linear resonator (2014)
Journal Article
Hramov, A., Makarov, V., Koronovskii, A., Kurkin, S., Gaifullin, M., Alexeeva, N., …Balanov, A. (2014). Subterahertz chaos generation by coupling a superlattice to a linear resonator. Physical Review Letters, 112(116603), https://doi.org/10.1103/PhysRevLett.112.116603

We investigate the effects of a linear resonator on the high-frequency dynamics of electrons in devices exhibiting negative differential conductance. We show that the resonator strongly affects both the dc and ac transport characteristics of the devi... Read More about Subterahertz chaos generation by coupling a superlattice to a linear resonator.

Apoferritin-encapsulated PbS quantum dots significantly inhibit growth of colorectal carcinoma cells (2013)
Journal Article
Bradshaw, T. D., Junor, M., Patanè, A., Clarke, P., Thomas, N. R., Li, M., …Turyanska, L. (2013). Apoferritin-encapsulated PbS quantum dots significantly inhibit growth of colorectal carcinoma cells. Journal of Materials Chemistry B, 45, 6254-6260. https://doi.org/10.1039/c3tb21197e

Colorectal carcinoma (CRC) is the 3rd most common cancer worldwide, thus development of novel therapeutic strategies is imperative. Herein potent, selective dose-dependent antitumor activity of horse spleen apoferritin encapsulated PbS quantum dots (... Read More about Apoferritin-encapsulated PbS quantum dots significantly inhibit growth of colorectal carcinoma cells.

Band-gap profiling by laser writing of hydrogen-containing III-N-Vs (2012)
Journal Article
Balakrishnan, N., Pettinari, G., Makarovsky, O., Turyanska, L., Fay, M. W., De Luca, M., …Patanè, A. (2012). Band-gap profiling by laser writing of hydrogen-containing III-N-Vs. Physical review B: Condensed matter and materials physics, 86(15), Article 155307. https://doi.org/10.1103/PhysRevB.86.155307

We show that the dissociation of the N-H complex in hydrogenated III-N-Vs can be laser activated at temperatures that are significantly smaller than those (>200°C) required for thermal dissociation due to a resonant photon absorption by the N-H compl... Read More about Band-gap profiling by laser writing of hydrogen-containing III-N-Vs.