Dr KE LI's Outputs (13)

Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors (2024)
Journal Article
Lu, X., Videt, A., Faramehr, S., Li, K., Marsic, V., Igic, P., & Idir, N. (2024). Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors. IEEE Transactions on Power Electronics, 39(9),

Schottky-type p-GaN gate Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) suffer from threshold voltage (Vth) instability phenomenon. Both positive and negative Vth shifts are reported when device undertakes the voltage bias, but the im... Read More about Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors.

Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors (2024)
Journal Article
Lu, X., Videt, A., Faramehr, S., Li, K., Marsic, V., Igic, P., & Idir, N. (2024). Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors. IEEE Transactions on Power Electronics, 39(9), 11625-11636. https://doi.org/10.1109/tpel.2024.3405320

Schottky-type p-GaN gate Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) suffer from threshold voltage ( Vth ) instability phenomenon. Both positive and negative Vth shifts are reported when device undertakes the voltage bias, but the... Read More about Impact of Vth Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors.

A Fast and Accurate GaN Power Transistor Model and Its Application for Electric Vehicle (2023)
Journal Article
Li, K., & Sen, S. (2024). A Fast and Accurate GaN Power Transistor Model and Its Application for Electric Vehicle. IEEE Transactions on Vehicular Technology, 73(4), 4541-4553. https://doi.org/10.1109/tvt.2023.3340297

In order to overcome the challenge of balancing accuracy with simulation speed of power electronics converters for system-level simulation, the paper proposes a GaN power transistor model that can accurately and rapidly predict power losses, which is... Read More about A Fast and Accurate GaN Power Transistor Model and Its Application for Electric Vehicle.

Deep Contrastive Representation Learning With Self-Distillation (2023)
Journal Article
Xiao, Z., Xing, H., Zhao, B., Qu, R., Luo, S., Dai, P., Li, K., & Zhu, Z. (2024). Deep Contrastive Representation Learning With Self-Distillation. IEEE Transactions on Emerging Topics in Computational Intelligence, 8(1), 3-15. https://doi.org/10.1109/tetci.2023.3304948

Recently, contrastive learning (CL) is a promising way of learning discriminative representations from time series data. In the representation hierarchy, semantic information extracted from lower levels is the basis of that captured from higher level... Read More about Deep Contrastive Representation Learning With Self-Distillation.

Guest Editorial Introduction to the Special Section on Innovative Electrified Vehicles (2022)
Journal Article
Ta, M. C., Li, K., & Bouscayrol, A. (2022). Guest Editorial Introduction to the Special Section on Innovative Electrified Vehicles. IEEE Transactions on Vehicular Technology, 71(6), 5674--5676. https://doi.org/10.1109/tvt.2022.3180124

The papers in this special section focus on innovative electrified vehicles. According to the “Global EV Outlook 2021” of International Energy Agency (IEA), ten million electric cars were on the world’s roads in 2020. It was an important year for the... Read More about Guest Editorial Introduction to the Special Section on Innovative Electrified Vehicles.

Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends (2021)
Journal Article
Van Do, T., Trovao, J. P. F., Li, K., & Boulon, L. (2021). Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends. IEEE Vehicular Technology Magazine, 16(4), 89-98. https://doi.org/10.1109/MVT.2021.3112943

In recent years, researchers have been attracted to the application of wide-bandgap (WBG) power semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) in electric vehicle (EV) applications. Their advantages over Si power semico... Read More about Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends.

A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters (2021)
Journal Article
Li, K., Evans, P. L., Johnson, C. M., Videt, A., & Idir, N. (2021). A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters. Energies, 14(8), Article 2092. https://doi.org/10.3390/en14082092

In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristic... Read More about A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters.

Optimal and automated decentralised converter control design in more electrical aircraft power electronics embedded grids (2021)
Journal Article
Dewar, D., Formentini, A., Li, K., Zanchetta, P., & Wheeler, P. (2021). Optimal and automated decentralised converter control design in more electrical aircraft power electronics embedded grids. IET Power Electronics, 14(3), 690-705. https://doi.org/10.1049/pel2.12056

In modern power systems, the proliferation of power electronics converters, and distributed generation raises important issues concerning inter-connected switching units in terms of performance, stability and robustness. Such phenomenon are more prom... Read More about Optimal and automated decentralised converter control design in more electrical aircraft power electronics embedded grids.

A Study of the Truncated Square Pyramid Geometry for Enhancement of Super-hydrophobicity (2020)
Journal Article
(2020). A Study of the Truncated Square Pyramid Geometry for Enhancement of Super-hydrophobicity. Journal of Bionic Engineering, 17, Article 843-850. https://doi.org/10.1007/s42235-020-0070-z

Super-hydrophobic surfaces are quite common in nature, inspiring people to continually explore its water-repellence property and applications to our lives. It has been generally agreed that the property of super-hydrophobicity is mainly contributed b... Read More about A Study of the Truncated Square Pyramid Geometry for Enhancement of Super-hydrophobicity.

Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors (2018)
Journal Article
O Brien, J., Yang, L., Li, K., Dai, J., Corfield, M., Harris, A., Paciura, K., O'Brien, J., & Johnson, C. M. (2018). Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors. IEEE Transactions on Power Electronics, 33(12), 10594-10601. https://doi.org/10.1109/TPEL.2018.2809923

Integration of decoupling capacitors in SiC MOSFET modules is an advanced solution to mitigate the effect of parasitic inductance induced by module assembly interconnects. In this paper, the switching transient behavior is reported for a 1.2kV SiC MO... Read More about Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors.

SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions (2018)
Journal Article
Li, K., Evans, P., & Johnson, M. (2018). SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions. IET Electrical Systems in Transportation, 8(1), 3-11. https://doi.org/10.1049/iet-est.2017.0022

(This study is for special section ‘Design, modelling and control of electric drives for transportation applications’) The conduction and switching losses of silicon carbide (SIC) and gallium nitride (GaN) power transistors are compared in this study... Read More about SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions.

Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance (2017)
Journal Article
Li, K., Evans, P., & Johnson, M. (2018). Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance. IEEE Transactions on Power Electronics, 33(6), 5262 - 5273. https://doi.org/10.1109/TPEL.2017.2730260

GaN-HEMTs suffer from trapping effects which increases device ON-state resistance (RDS(on)) above its theoretical value. This increase is a function of the applied DC bias when the device is in its OFF state, and the time which the device is biased f... Read More about Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance.

SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions (2017)
Journal Article
Li, K., Evans, P., & Johnson, M. (in press). SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions. IET Electrical Systems in Transportation, https://doi.org/10.1049/iet-est.2017.0022

The conduction and switching losses of SiC and GaN power transistors are compared in this paper. Voltage rating of commercial GaN power transistors is less than 650V while that of SiC power transistors is less than 1200V. The paper begins with a theo... Read More about SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions.