Single pulse short-circuit robustness and repetitive stress aging of GaN GITs
(2018)
Conference Proceeding
Castellazzi, A., Fayyaz, A., Zhu, S., Oeder, T., & Pfost, M. (2018). Single pulse short-circuit robustness and repetitive stress aging of GaN GITs. In Proceedings of 2018 IEEE International Reliability Physics Symposium (IRPS), 11-15 March 2018, Burlingame, California, USA (4E.1-1-4E.1-10). https://doi.org/10.1109/IRPS.2018.8353593
Short-circuit withstand capability is a key requirement for semiconductor power devices in a number of strategic application domains, including traction, renewable energies and power distribution. Indeed, though clearly a non-intentional operational... Read More about Single pulse short-circuit robustness and repetitive stress aging of GaN GITs.