Experimental demonstration of an optimised PWM scheme for more even device electro-thermal stress in a 3-Level ANPC GaN inverter

Zeng, Y.; Gurpinar, Emre; Hussein, A.; Castellazzi, Alberto

Abstract

GaN device as one potential power electronics device has been gained much attention recently. One of the power conversion systems, ANPC inverter using GaN HEMT is potentially considered to be prospective usage of low loss and high efficiency. In this work, we demonstrate one optimised PWM scheme aims at balancing the device electro-thermal stress based on Parma PWM to control 3-Level ANPC GaN inverter. The method is to decrease the loss for switches account for the large loss and increase the loss for switches with less thermal stress initially. The simulation and experimental results prove the effectiveness of the optimised PWM in controlling the loss distribution.

Citation

Zeng, Y., Gurpinar, E., Hussein, A., & Castellazzi, A. (2018). Experimental demonstration of an optimised PWM scheme for more even device electro-thermal stress in a 3-Level ANPC GaN inverter.

• Conference Name: 9th International Conference on Power Electronics, Machines and Drives (PEMD 2018)
• End Date: Apr 19, 2018
• Acceptance Date: Feb 14, 2018
• Publication Date: Apr 18, 2018
• Deposit Date: Apr 30, 2018
• Publicly Available Date: Apr 30, 2018
• Peer Reviewed: Peer Reviewed
• Keywords: GaN HEMT, Single Phase 3L ANPC Inverter, Optimised PWM control
• Public URL: https://nottingham-repository.worktribe.com/output/927259
• Related Public URLs: https://events.theiet.org/pemd/