Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well

Herval, L.K S.; Galeti, H.V.A.; Orsi Gordo, V.; Galvao Gobato, Y.; Brasil, M.J.S.P.; Taylor, D.; Henini, M.

doi:10.1109/SBMicro.2014.6940126

All Outputs (2)

iSense: a technology platform for cold atom based quantum technologies (2014)
Conference Proceeding
Bongs, K., Malcolm, J., Ramelloo, C., Zhu, L., Boyer, V., Valenzuela, T., …Wicht, A. (2014). iSense: a technology platform for cold atom based quantum technologies. In Research in Optical Sciences. https://doi.org/10.1364/QIM.2014.QTu3B.1

A breakthrough in cold atom quantum technology is hindered by a bottleneck in the supporting technologies. We discuss a cold atom technology platform developed within the European iSense project, aiming at a gravimeter as demonstrator.

Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well (2014)
Conference Proceeding
Herval, L. S., Galeti, H., Orsi Gordo, V., Galvao Gobato, Y., Brasil, M., Taylor, D., & Henini, M. (2014). Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well. In 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro). https://doi.org/10.1109/SBMicro.2014.6940126

In this work, we have investigated magneto-transport and polarization resolved photoluminescence of a GaAs/AlGaAs resonant tunneling diode with Si delta-doping at the center of the quantum well under a magnetic field parallel to the tunnel current. T... Read More about Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well.