A physics-based compact model of SiC power MOSFETs
(2015)
Journal Article
Kraus, R., & Castellazzi, A. (2016). A physics-based compact model of SiC power MOSFETs. IEEE Transactions on Power Electronics, 31(8), 5863-5870. https://doi.org/10.1109/TPEL.2015.2488106
The presented compact model of SiC power MOSFETs is based on a thorough consideration of the physical phenomena which are important for the device characteristics and its electrothermal behavior. The model includes descriptions of the dependence of c... Read More about A physics-based compact model of SiC power MOSFETs.