Room-temperature antiferromagnetic memory resistor

Marti, X.; Fina, I.; Frontera, C.; Liu, Jian; Wadley, P.; He, Q.; Paull, R. J.; Clarkson, J. D.; Kudrnovsk�, J.; Turek, I.; Kune�, J.; Yi, D.; Chu, J.-H.; Nelson, C. T.; You, L.; Arenholz, E.; Salahuddin, S.; Fontcuberta, J.; Jungwirth, T.; Ramesh, R.

doi:10.1038/nmat3861

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