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Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

Authors

MU WANG Mu.Wang@nottingham.ac.uk
Research Fellow in Antiferromagnetic Spintronics

PETER WADLEY PETER.WADLEY@NOTTINGHAM.AC.UK
Principal Research Fellow

K. W. Edmonds

B. L. Gallagher

T. R. Charlton

C. J. Kinane

S. Langridge



Abstract

We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

Journal Article Type Article
Publication Date Aug 7, 2015
Journal Journal of Applied Physics
Print ISSN 0021-8979
Electronic ISSN 1089-7550
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 118
Issue 5
Article Number 053913
APA6 Citation Wang, M., Wadley, P., Campion, R. P., Rushforth, A. W., Edmonds, K. W., Gallagher, B. L., …Langridge, S. (2015). Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers. Journal of Applied Physics, 118(5), https://doi.org/10.1063/1.4928206
DOI https://doi.org/10.1063/1.4928206
Publisher URL http://aip.scitation.org/doi/10.1063/1.4928206
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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