Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

Abstract

We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

Citation

Wang, M., Wadley, P., Campion, R. P., Rushforth, A. W., Edmonds, K. W., Gallagher, B. L., …Langridge, S. (2015). Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers. Journal of Applied Physics, 118(5), Article 053913. https://doi.org/10.1063/1.4928206

• Journal Article Type: Article
• Acceptance Date: Jul 28, 2015
• Publication Date: Aug 7, 2015
• Deposit Date: Apr 19, 2017
• Publicly Available Date: Apr 19, 2017
• Journal: Journal of Applied Physics
• Print ISSN: 0021-8979
• Electronic ISSN: 1089-7550
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 118
• Issue: 5
• Article Number: 053913
• DOI: https://doi.org/10.1063/1.4928206
• Public URL: https://nottingham-repository.worktribe.com/output/759442
• Publisher URL: http://aip.scitation.org/doi/10.1063/1.4928206
• Contract Date: Apr 19, 2017