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Room-temperature antiferromagnetic memory resistor


X. Marti

I. Fina

C. Frontera

Jian Liu

Assistant Professor in Experimental Condensed Matter Physics

Q. He

R. J. Paull

J. D. Clarkson


I. Turek


D. Yi

J.-H. Chu

C. T. Nelson

L. You

E. Arenholz

S. Salahuddin

J. Fontcuberta

Research Professor of Ferromagnetic Semiconductors

R. Ramesh


The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical means for writing and reading the information in ferromagnets. This concept may eventually reduce the sensitivity of ferromagnets to magnetic field perturbations to being a weakness for data retention and the ferromagnetic stray fields to an obstacle for high-density memory integration. Here we report a room-temperature bistable antiferromagnetic (AFM) memory that produces negligible stray fields and is insensitive to strong magnetic fields. We use a resistor made of a FeRh AFM, which orders ferromagnetically roughly 100 K above room temperature, and therefore allows us to set different collective directions for the Fe moments by applied magnetic field. On cooling to room temperature, AFM order sets in with the direction of the AFM moments predetermined by the field and moment direction in the high-temperature ferromagnetic state. For electrical reading, we use an AFM analogue of the anisotropic magnetoresistance. Our microscopic theory modelling confirms that this archetypical spintronic effect, discovered more than 150 years ago in ferromagnets, is also present in AFMs. Our work demonstrates the feasibility of fabricating room-temperature spintronic memories with AFMs, which in turn expands the base of available magnetic materials for devices with properties that cannot be achieved with ferromagnets. © 2014 Macmillan Publishers Limited. All rights reserved.


Marti, X., Fina, I., Frontera, C., Liu, J., Wadley, P., He, Q., …Ramesh, R. (2014). Room-temperature antiferromagnetic memory resistor. Nature Materials, 13(4), 367-374.

Journal Article Type Article
Acceptance Date Dec 10, 2013
Online Publication Date Jan 26, 2014
Publication Date 2014-04
Deposit Date Sep 6, 2017
Journal Nature Materials
Print ISSN 1476-1122
Electronic ISSN 1476-4660
Publisher Nature Publishing Group
Peer Reviewed Peer Reviewed
Volume 13
Issue 4
Pages 367-374
Keywords Mechanical Engineering; General Materials Science; Mechanics of Materials; General Chemistry; Condensed Matter Physics
Public URL
Publisher URL
PMID 00033339