All Outputs (3)

Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs (2022)
Conference Proceeding

Silicon Carbide (SiC) N-channel Insulated Gate Bipolar Transistors (n-IGBTs) rated higher than 10kV can improve Medium Voltage and High Voltage power electronics due to the favourable combination of SiC material with the nIGBT device structure. This... Read More about Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs.

Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT (2022)
Conference Proceeding

This paper presents a comprehensive short-circuit robustness investigation of 4H- Silicon Carbide (SiC) n-type Insulated Gate Bipolar Transistors (nIGBTs) for Medium-Voltage and High- Voltage applications. Numerical electrothermal TCAD simulations ev... Read More about Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT.

Cooling System Sizing using LPTN Analysis and Multiphysics Modelling for an Axial Flux Machine and Integrated Drive (2022)
Conference Proceeding

In this paper a Lumped Parameter Thermal Network (LPTN) is proposed for a Yokeless and Segmented Armature (YASA) axial flux permanent magnet (AFPM) machine. A simulation model is used to examine the machine in isolation, with an Integrated Motor Driv... Read More about Cooling System Sizing using LPTN Analysis and Multiphysics Modelling for an Axial Flux Machine and Integrated Drive.