All Outputs (2)

Gate-Commutated Thyristor cell with a base region having a varying thickness (2022)
Patent
Vemulapati, U., Lophitis, N., Vobecky, J., Udrea, F., Stiasny, T., Corvasce, C., & Antoniou, M. (2022). Gate-Commutated Thyristor cell with a base region having a varying thickness. EP4053915A1. European Patent Office

A power semiconductor device (1) comprises a gate-commutated thyristor cell (20) including a cathode electrode (2), a cathode region (9) of a first conductivity type, a base layer (8) of a second conductivity type, a drift layer (7) of the first cond... Read More about Gate-Commutated Thyristor cell with a base region having a varying thickness.

A semiconductor device and methods for production thereof (2021)
Patent
Lophitis, N., & Arvanitopoulos, A. (2021). A semiconductor device and methods for production thereof. WO2021/001645 A1

A method for producing a semiconductor device, which includes epitaxially forming a first layer of n-type conductivity on a substrate or on a previously epitaxially formed layer; epitaxially forming a body layer of p-type conductivity on the first la... Read More about A semiconductor device and methods for production thereof.