All Outputs (113)

Negative activation energy and dielectric signatures of excitons and excitonic Mott transitions in quantum confined laser structures (2016)
Journal Article
Bhunia, A., Bansal, K., Henini, M., Alshammari, M., & Datta, S. (in press). Negative activation energy and dielectric signatures of excitons and excitonic Mott transitions in quantum confined laser structures. Journal of Applied Physics, 120, Article 144304. https://doi.org/10.1063/1.4964850

Mostly, optical spectroscopies are used to investigate the physics of excitons, whereas their electrical evidences are hardly explored. Here, we examined a forward bias activated differential capacitance response of GaInP/AlGaInP based multi-quantum... Read More about Negative activation energy and dielectric signatures of excitons and excitonic Mott transitions in quantum confined laser structures.

Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi (2016)
Journal Article
Steele, J., Lewis, R., Horvat, J., Nancarrow, M., Henini, M., Fan, D., Mazur, Y., Schmidbauer, M., Ware, M., Yu, S., & Salamo, G. (in press). Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi. Scientific Reports, 6(28860), https://doi.org/10.1038/srep28860

Herein we investigate a (001)-oriented GaAs1−xBix/GaAs structure possessing Bi surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth, through the vapourliquid-solid mechanism. Specifically, self-aligned “nanotra... Read More about Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi.

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations (2016)
Journal Article
Jameel, D., Aziz, M., Felix, J., Al Saqri, N., Taylor, D., Albalawi, H., Alghamdi, H., Al Mashary, F., & Henini, M. (2016). Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations. Applied Surface Science, 387, 228-236. https://doi.org/10.1016/j.apsusc.2016.06.097

This article reports the effect of n-type GaAs substrate orientation, namely (100), (311)A and (311)B, on the electrical properties of sulfonated polyaniline (SPAN)/GaAs heterojunction devices. In addition, the inhomogeneity of the interface between... Read More about Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations.

Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes (2016)
Journal Article
Teffahi, A., Hamri, D., Mostefa, A., Saidane, A., Al Saqri, N., Felix, J., & Henini, M. (in press). Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes. Current Applied Physics, 16(8), https://doi.org/10.1016/j.cap.2016.05.003

Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G/ω-V-f) measurements at room temperature are used to study 50 kGy 60Co γ-ray electrical properties irradiation dependence of Ti/Au/GaAs1−xNx Schottky dio... Read More about Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes.

Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes (2016)
Journal Article
Rodrigues, D., Brasil, M., Orlita, M., Kunc, J., Galeti, H., Henini, M., Taylor, D., & H.V.A., Y. (2016). Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes. Journal of Physics D: Applied Physics, 49(16), https://doi.org/10.1088/0022-3727/49/16/165104

We have investigated the polarization-resolved electroluminescence (EL) of a p–i–n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x  =  5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunnel... Read More about Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes.

Surface-enhanced Raman spectroscopy study of 4-ATP on gold nanoparticles for basal cell carcinoma fingerprint detection (2016)
Journal Article
Quynh, L. M., Nam, N. H., Kong, K., Nhung, N. T., Notingher, I., Henini, M., & Luong, N. H. (2016). Surface-enhanced Raman spectroscopy study of 4-ATP on gold nanoparticles for basal cell carcinoma fingerprint detection. Journal of Electronic Materials, 45(5), 2563-2568. https://doi.org/10.1007/s11664-016-4421-9

The surface-enhanced Raman signals of 4-aminothiophenol (4-ATP) attached to the surface of colloidal gold nanoparticles with size distribution of 2 to 5 nm were used as a labeling agent to detect basal cell carcinoma (BCC) of the skin. The enhanced R... Read More about Surface-enhanced Raman spectroscopy study of 4-ATP on gold nanoparticles for basal cell carcinoma fingerprint detection.

Modeling the effect of 1 MeV electron irradiation on the performance of n(+)-p-p(+) silicon space solar cells (2016)
Journal Article
Hamache, A., Sengouga, N., Meftah, A., & Henini, M. (2016). Modeling the effect of 1 MeV electron irradiation on the performance of n(+)-p-p(+) silicon space solar cells. Radiation Physics and Chemistry, 123, https://doi.org/10.1016/j.radphyschem.2016.02.025

Energetic particles such as electrons and protons induce severe degradation on the performance of solar cells used to power satellites and space vehicles. This degradation is usually attributed to lattice damage in the active region of the solar cell... Read More about Modeling the effect of 1 MeV electron irradiation on the performance of n(+)-p-p(+) silicon space solar cells.

Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures (2015)
Journal Article
Steele, J., Horvat, J., Lewis, R., Henini, M., Fan, D., Mazur, Y., Dorogan, V., Grant, P., Yu, S., & Salamo, G. (in press). Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures. Nanoscale, 7(48), https://doi.org/10.1039/c5nr06676j

In this study we report in-plane nanotracks produced by molecular-beam-epitaxy (MBE) exhibiting lateral self-assembly and unusual periodic and out-of-phase height variations across their growth axes. The nanotracks are synthesized using bismuth segre... Read More about Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures.

Detection of anomalous Hall voltages in ultrahigh-mobility two-dimensional hole gases generated by optical spin orientation (2015)
Journal Article
Vasyukov, D. A., Plaut, A. S., Henini, M., Pfeiffer, L. N., West, K. W., Nicoll, C. A., Farrer, I., & Ritchie, D. A. (2015). Detection of anomalous Hall voltages in ultrahigh-mobility two-dimensional hole gases generated by optical spin orientation. Physical review B: Condensed matter and materials physics, 91(20), Article 201406. https://doi.org/10.1103/physrevb.91.201406

By combining optical spin orientation and an externally applied longitudinal electric field, transverse charge accumulation has been detected in very high-mobility two-dimensional hole gases by measuring the transverse voltage drop across simple Hall... Read More about Detection of anomalous Hall voltages in ultrahigh-mobility two-dimensional hole gases generated by optical spin orientation.

Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias (2014)
Journal Article
Bansal, K., Henini, M., Alshammari, M. S., & Datta, S. (2014). Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias. Applied Physics Letters, 105(12), Article 123503. https://doi.org/10.1063/1.4896541

We observed qualitatively dissimilar frequency dependence of negative capacitance under high charge injection in two sets of functionally different junction diodes: III-V based light emitting and Si-based non-light emitting diodes. Using an advanced... Read More about Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias.

Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration (2014)
Journal Article
Steele, J., Lewis, R., Henini, M., Lemine, O., Fan, D., Mazur, Y., Dorogan, V., Grant, P., Yu, S., & Salamo, G. (2014). Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration. Optics Express, 22(10), https://doi.org/10.1364/OE.22.011680

We report room-temperature Raman scattering studies of nominally undoped (100) GaAs1−xBix epitaxial layers exhibiting Biinduced (p-type) longitudinal-optical-plasmon coupled (LOPC) modes for 0.018≤x≤0.048. Redshifts in the GaAs-like optical modes due... Read More about Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration.

Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well (2014)
Presentation / Conference Contribution
Herval, L. S., Galeti, H., Orsi Gordo, V., Galvao Gobato, Y., Brasil, M., Taylor, D., & Henini, M. Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well. Presented at 29th Symposium on Microelectronics Technology and Devices (SBMicro) 2014

In this work, we have investigated magneto-transport and polarization resolved photoluminescence of a GaAs/AlGaAs resonant tunneling diode with Si delta-doping at the center of the quantum well under a magnetic field parallel to the tunnel current. T... Read More about Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well.

Scanning capacitance imaging of compressible and incompressible quantum Hall effect edge strips (2012)
Journal Article
Suddards, M., Baumgartner, A., Henini, M., & Mellor, C. J. (2012). Scanning capacitance imaging of compressible and incompressible quantum Hall effect edge strips. New Journal of Physics, 14, Article 08315. https://doi.org/10.1088/1367-2630/14/8/083015

We use dynamic scanning capacitance microscopy to image compressible and incompressible strips at the edge of a Hall bar in a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime. This method gives access to the complex local c... Read More about Scanning capacitance imaging of compressible and incompressible quantum Hall effect edge strips.