All Outputs (4)

Gating effects in antiferromagnetic CuMnAs (2019)
Journal Article
Grzybowski, M. J., Wadley, P., Edmonds, K. W., Campion, R. P., Dybko, K., Majewicz, M., …Dietl, T. (2019). Gating effects in antiferromagnetic CuMnAs. AIP Advances, 9(11), 1-5. https://doi.org/10.1063/1.5124354

Antiferromagnets (AFs) attract much attention due to their potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control the properties and the Néel vector direction of AFs. Among... Read More about Gating effects in antiferromagnetic CuMnAs.

Thermal stability of interstitial and substitutional Mn in ferromagnetic (Ga,Mn)As (2019)
Journal Article
Lima, T. A. L., Wahl, U., Costa, A., Augustyns, V., Edmonds, K. W., Gallagher, B. L., …Pereira, L. M. C. (2019). Thermal stability of interstitial and substitutional Mn in ferromagnetic (Ga,Mn)As. Physical Review B, 100(14), Article 144409. https://doi.org/10.1103/physrevb.100.144409

© 2019 American Physical Society. In (Ga,Mn)As, a model dilute magnetic semiconductor, the electric and magnetic properties are strongly influenced by the lattice sites occupied by the Mn atoms. In particular, the highest Curie temperatures are achie... Read More about Thermal stability of interstitial and substitutional Mn in ferromagnetic (Ga,Mn)As.

Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque (2019)
Journal Article
Yang, M., Deng, Y., Wu, Z., Cai, K., Edmonds, K. W., Li, Y., …Wang, K. (2019). Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque. IEEE Electron Device Letters, 40(9), 1554-1557. https://doi.org/10.1109/led.2019.2932479

We describe a spin logic device with controllable magnetization switching of perpendicularly magnetized ferromagnet/heavy metal structures on a ferroelectric (1-x)[Pb(Mg 1/3 Nb 2/3 )O 3 ]-x[PbTiO 3 ] (PMN-PT) substrate using current-induced spin-orbi... Read More about Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque.

Multilevel information storage using magnetoelastic layer stacks (2019)
Journal Article
Pattnaik, D., Beardsley, R., Love, C., Cavill, S., Edmonds, K., & Rushforth, A. (2019). Multilevel information storage using magnetoelastic layer stacks. Scientific Reports, 9, Article 3156. https://doi.org/10.1038/s41598-019-39775-1

The use of voltages to control magnetisation via the inverse magnetostriction effect in piezoelectric/ferromagnet heterostructures holds promise for ultra-low energy information storage technologies. Epitaxial galfenol, an alloy of iron and gallium,... Read More about Multilevel information storage using magnetoelastic layer stacks.