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Gating effects in antiferromagnetic CuMnAs

Grzybowski, M. J.; Wadley, P.; Edmonds, K. W.; Campion, R. P.; Dybko, K.; Majewicz, M.; Gallagher, B. L.; Sawicki, M.; Dietl, T.


M. J. Grzybowski

Assistant Professor in Experimentalcondensed Matter Physics

Associate Professor & Reader in Physics

K. Dybko

M. Majewicz

B. L. Gallagher

M. Sawicki

T. Dietl


Antiferromagnets (AFs) attract much attention due to their potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control the properties and the Néel vector direction of AFs. Among AFs, CuMnAs has been shown to exhibit specific properties that result in the existence of the current induced spin-orbit torques commensurate with spin directions and topological Dirac quasiparticles. Here, we report on the observation of a reversible effect of an electric field on the resistivity of CuMnAs thin films, employing an ionic liquid as a gate insulator. The data allow us to determine the carrier type, concentration, and mobility independent of the Hall effect that may be affected by an anomalous component.


Grzybowski, M. J., Wadley, P., Edmonds, K. W., Campion, R. P., Dybko, K., Majewicz, M., …Dietl, T. (2019). Gating effects in antiferromagnetic CuMnAs. AIP Advances, 9(11), 1-5.

Journal Article Type Article
Acceptance Date Oct 20, 2019
Online Publication Date Nov 8, 2019
Publication Date 2019-11
Deposit Date Dec 6, 2019
Journal AIP Advances
Electronic ISSN 2158-3226
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 9
Issue 11
Article Number 115101
Pages 1-5
Public URL
Publisher URL


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