Gating effects in antiferromagnetic CuMnAs

Grzybowski, M. J.; Wadley, P.; Edmonds, K. W.; Campion, R. P.; Dybko, K.; Majewicz, M.; Gallagher, B. L.; Sawicki, M.; Dietl, T.

Abstract

Antiferromagnets (AFs) attract much attention due to their potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control the properties and the Néel vector direction of AFs. Among AFs, CuMnAs has been shown to exhibit specific properties that result in the existence of the current induced spin-orbit torques commensurate with spin directions and topological Dirac quasiparticles. Here, we report on the observation of a reversible effect of an electric field on the resistivity of CuMnAs thin films, employing an ionic liquid as a gate insulator. The data allow us to determine the carrier type, concentration, and mobility independent of the Hall effect that may be affected by an anomalous component.

Citation

Grzybowski, M. J., Wadley, P., Edmonds, K. W., Campion, R. P., Dybko, K., Majewicz, M., …Dietl, T. (2019). Gating effects in antiferromagnetic CuMnAs. AIP Advances, 9(11), 1-5. https://doi.org/10.1063/1.5124354

• Journal Article Type: Article
• Acceptance Date: Oct 20, 2019
• Online Publication Date: Nov 8, 2019
• Publication Date: 2019-11
• Deposit Date: Dec 6, 2019
• Publicly Available Date: Dec 6, 2019
• Journal: AIP Advances
• Electronic ISSN: 2158-3226
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 9
• Issue: 11
• Article Number: 115101
• Pages: 1-5
• DOI: https://doi.org/10.1063/1.5124354
• Public URL: https://nottingham-repository.worktribe.com/output/3496514
• Publisher URL: https://aip.scitation.org/doi/10.1063/1.5124354