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Multilevel information storage using magnetoelastic layer stacks

Pattnaik, D.P.; Beardsley, R.P.; Love, C.; Cavill, S.A.; Edmonds, K.W.; Rushforth, A.W.

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D.P. Pattnaik

R.P. Beardsley

C. Love

S.A. Cavill

Associate Professor & Reader in Physics


The use of voltages to control magnetisation via the inverse magnetostriction effect in piezoelectric/ferromagnet heterostructures holds promise for ultra-low energy information storage technologies. Epitaxial galfenol, an alloy of iron and gallium, has been shown to be a highly suitable material for such devices because it possesses biaxial anisotropy and large magnetostriction. Here we experimentally investigate the properties of galfenol/spacer/galfenol structures in which the compositions of the galfenol layers are varied in order to produce different strengths of the magnetic anisotropy and magnetostriction constants. Based upon these layers, we propose and simulate the operation of an information storage device that can operate as an energy efficient multilevel memory cell.


Pattnaik, D., Beardsley, R., Love, C., Cavill, S., Edmonds, K., & Rushforth, A. (2019). Multilevel information storage using magnetoelastic layer stacks. Scientific Reports, 9, Article 3156.

Journal Article Type Article
Acceptance Date Feb 4, 2019
Online Publication Date Feb 28, 2019
Publication Date Feb 28, 2019
Deposit Date Feb 15, 2019
Publicly Available Date Feb 28, 2019
Journal Scientific Reports
Electronic ISSN 2045-2322
Publisher Nature Publishing Group
Peer Reviewed Peer Reviewed
Volume 9
Article Number 3156
Public URL
Publisher URL
Additional Information Received: 12 October 2018; Accepted: 4 February 2019; First Online: 28 February 2019; : The authors declare no competing interests.


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