Multilevel information storage using magnetoelastic layer stacks

Pattnaik, D.P.; Beardsley, R.P.; Love, C.; Cavill, S.A.; Edmonds, K.W.; Rushforth, A.W.

Abstract

The use of voltages to control magnetisation via the inverse magnetostriction effect in piezoelectric/ferromagnet heterostructures holds promise for ultra-low energy information storage technologies. Epitaxial galfenol, an alloy of iron and gallium, has been shown to be a highly suitable material for such devices because it possesses biaxial anisotropy and large magnetostriction. Here we experimentally investigate the properties of galfenol/spacer/galfenol structures in which the compositions of the galfenol layers are varied in order to produce different strengths of the magnetic anisotropy and magnetostriction constants. Based upon these layers, we propose and simulate the operation of an information storage device that can operate as an energy efficient multilevel memory cell.

Citation

Pattnaik, D., Beardsley, R., Love, C., Cavill, S., Edmonds, K., & Rushforth, A. (2019). Multilevel information storage using magnetoelastic layer stacks. Scientific Reports, 9, Article 3156. https://doi.org/10.1038/s41598-019-39775-1

• Journal Article Type: Article
• Acceptance Date: Feb 4, 2019
• Online Publication Date: Feb 28, 2019
• Publication Date: Feb 28, 2019
• Deposit Date: Feb 15, 2019
• Publicly Available Date: Feb 28, 2019
• Journal: Scientific Reports
• Electronic ISSN: 2045-2322
• Publisher: Nature Publishing Group
• Peer Reviewed: Peer Reviewed
• Volume: 9
• Article Number: 3156
• DOI: https://doi.org/10.1038/s41598-019-39775-1
• Public URL: https://nottingham-repository.worktribe.com/output/1551663
• Publisher URL: https://www.nature.com/articles/s41598-019-39775-1
• Additional Information: Received: 12 October 2018; Accepted: 4 February 2019; First Online: 28 February 2019; : The authors declare no competing interests.