All Outputs (2)

Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends (2021)
Journal Article
Van Do, T., Trovao, J. P. F., Li, K., & Boulon, L. (2021). Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends. IEEE Vehicular Technology Magazine, 16(4), 89-98. https://doi.org/10.1109/MVT.2021.3112943

In recent years, researchers have been attracted to the application of wide-bandgap (WBG) power semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) in electric vehicle (EV) applications. Their advantages over Si power semico... Read More about Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends.

A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters (2021)
Journal Article
Li, K., Evans, P. L., Johnson, C. M., Videt, A., & Idir, N. (2021). A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters. Energies, 14(8), Article 2092. https://doi.org/10.3390/en14082092

In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristic... Read More about A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters.