Ligand-Induced Control of Photoconductive Gain and Doping in a Hybrid Graphene–Quantum Dot Transistor

Turyanska, Lyudmila; Makarovsky, Oleg; Svatek, Simon A.; Beton, Peter H.; Mellor, Christopher J.; Patan�, Amalia; Eaves, Laurence; Thomas, Neil R.; Fay, Michael W.; Marsden, Alexander J.; Wilson, Neil R.

doi:10.1002/aelm.201500062

All Outputs (7)

Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy (2023)
Journal Article

Integration of graphene and hexagonal boron nitride (hBN) in lateral heterostructures has provided a route to broadly engineer the material properties by quantum confinement of electrons or introduction of novel electronic and magnetic states at the... Read More about Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy.

High-temperature molecular beam epitaxy of hexagonal boron nitride with high active nitrogen fluxes (2018)
Journal Article

Hexagonal boron nitride (hBN) has attracted much attention as a key component in van der Waals heterostructures and as a wide band gap material for deep-ultraviolet devices. We have recently demonstrated plasma-assisted molecular beam epitaxy (PA-MBE... Read More about High-temperature molecular beam epitaxy of hexagonal boron nitride with high active nitrogen fluxes.

High-temperature molecular beam epitaxy of hexagonal boron nitride layers (2018)
Journal Article

The growth and properties of hexagonal boron nitride (hBN) have recently attracted much attention due to applications in graphene-based monolayer thick 2D-structures and at the same time as a wide band gap material for deep-ultraviolet device (DUV) a... Read More about High-temperature molecular beam epitaxy of hexagonal boron nitride layers.

Lattice-Matched Epitaxial Graphene Grown on Boron Nitride (2017)
Journal Article

Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band-gap but requires the formation of highly strained material and has not hitherto been realised. We demonstrate that aligned, lattice-matched graphene ca... Read More about Lattice-Matched Epitaxial Graphene Grown on Boron Nitride.

Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy (2016)
Journal Article

We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting... Read More about Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy.

Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy (2016)
Journal Article

Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are hig... Read More about Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy.

Ligand-Induced Control of Photoconductive Gain and Doping in a Hybrid Graphene–Quantum Dot Transistor (2015)
Journal Article

In graphene devices decorated with a layer of near-infrared colloidal PbS quantum dots (QDs), the choice of the QD capping ligands and the integrity of the QD layer have a strong influence on the doping, carrier mobility, and photoresponse. By using... Read More about Ligand-Induced Control of Photoconductive Gain and Doping in a Hybrid Graphene–Quantum Dot Transistor.