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Lattice-matched epitaxial graphene grown on boron nitride

Davies, Andrew; Albar, J.D.; Summerfield, Alex; Thomas, James C.; Cheng, Tin S.; Korolkov, Vladimir V.; Stapleton, Emily; Wrigley, James; Goodey, Nathan L.; Mellor, Christopher J.; Khlobystov, Andrei N.; Watanabe, Kenji; Taniguchi, Takashi; Foxon, C.T.; Eaves, Laurence; Novikov, Sergei V.; Beton, Peter H.


Andrew Davies

J.D. Albar

Alex Summerfield

James C. Thomas

Tin S. Cheng

Vladimir V. Korolkov

Emily Stapleton

James Wrigley

Nathan L. Goodey

Christopher J. Mellor

Andrei N. Khlobystov

Kenji Watanabe

Takashi Taniguchi

C.T. Foxon

Laurence Eaves

Sergei V. Novikov

Peter H. Beton


Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band-gap but requires the formation of highly strained material and has not hitherto been realised. We demonstrate that aligned, lattice-matched graphene can be grown by molecular beam epitaxy using substrate temperatures in the range 1600-1710 °C and co-exists with a topologically-modified moiré pattern, and with regions of strained graphene which have giant moiré periods up to ~80 nm. Raman spectra reveal narrow red-shifted peaks due to isotropic strain, while the giant moiré patterns result in complex splitting of Raman peaks due to strain variations across the moiré unit cell. The lattice-matched graphene has a lower conductance than both the Frenkel-Kontorova-type domain walls, and also the topological defects where they terminate. We relate these results to theoretical models of band-gap formation in graphene/boron nitride heterostructures.

Journal Article Type Article
Publication Date Jan 10, 2018
Journal Nano Letters
Print ISSN 1530-6984
Electronic ISSN 1530-6992
Publisher American Chemical Society
Peer Reviewed Peer Reviewed
Volume 18
Issue 1
APA6 Citation Davies, A., Albar, J., Summerfield, A., Thomas, J. C., Cheng, T. S., Korolkov, V. V., …Beton, P. H. (2018). Lattice-matched epitaxial graphene grown on boron nitride. Nano Letters, 18(1),
Keywords graphene; boron nitride; growth; strain; band-gap; epitaxy
Publisher URL
Copyright Statement Copyright information regarding this work can be found at the following address:


acs.nanolett.7b04453.pdf (6.9 Mb)

Copyright Statement
Copyright information regarding this work can be found at the following address:

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