Andrew Davies
Lattice-Matched Epitaxial Graphene Grown on Boron Nitride
Davies, Andrew; Albar, J.D.; Summerfield, Alex; Thomas, James C.; Cheng, Tin S.; Korolkov, Vladimir V.; Stapleton, Emily; Wrigley, James; Goodey, Nathan L.; Mellor, Christopher J.; Khlobystov, Andrei N.; Watanabe, Kenji; Taniguchi, Takashi; Foxon, C.T.; Eaves, Laurence; Novikov, Sergei V.; Beton, Peter H.
Authors
J.D. Albar
Alex Summerfield
James C. Thomas
TIN CHENG Tin.Cheng@nottingham.ac.uk
Research Fellow
Vladimir V. Korolkov
Emily Stapleton
James Wrigley
Nathan L. Goodey
CHRISTOPHER MELLOR chris.mellor@nottingham.ac.uk
Associate Professor and Reader in Physics
ANDREI KHLOBYSTOV ANDREI.KHLOBYSTOV@NOTTINGHAM.AC.UK
Professor of Chemical Nanoscience
Kenji Watanabe
Takashi Taniguchi
C.T. Foxon
LAURENCE EAVES laurence.eaves@nottingham.ac.uk
Research Professor
SERGEI NOVIKOV sergei.novikov@nottingham.ac.uk
Professor of Physics
PETER BETON peter.beton@nottingham.ac.uk
Professor of Physics
Abstract
Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band-gap but requires the formation of highly strained material and has not hitherto been realised. We demonstrate that aligned, lattice-matched graphene can be grown by molecular beam epitaxy using substrate temperatures in the range 1600-1710 °C and co-exists with a topologically-modified moiré pattern, and with regions of strained graphene which have giant moiré periods up to ~80 nm. Raman spectra reveal narrow red-shifted peaks due to isotropic strain, while the giant moiré patterns result in complex splitting of Raman peaks due to strain variations across the moiré unit cell. The lattice-matched graphene has a lower conductance than both the Frenkel-Kontorova-type domain walls, and also the topological defects where they terminate. We relate these results to theoretical models of band-gap formation in graphene/boron nitride heterostructures.
Citation
Davies, A., Albar, J., Summerfield, A., Thomas, J. C., Cheng, T. S., Korolkov, V. V., …Beton, P. H. (2018). Lattice-Matched Epitaxial Graphene Grown on Boron Nitride. Nano Letters, 18(1), 498-504. https://doi.org/10.1021/acs.nanolett.7b04453
Journal Article Type | Article |
---|---|
Acceptance Date | Dec 6, 2017 |
Online Publication Date | Dec 12, 2017 |
Publication Date | Jan 10, 2018 |
Deposit Date | Dec 14, 2017 |
Publicly Available Date | Dec 14, 2017 |
Journal | Nano Letters |
Print ISSN | 1530-6984 |
Electronic ISSN | 1530-6992 |
Publisher | American Chemical Society |
Peer Reviewed | Peer Reviewed |
Volume | 18 |
Issue | 1 |
Pages | 498-504 |
DOI | https://doi.org/10.1021/acs.nanolett.7b04453 |
Keywords | graphene; boron nitride; growth; strain; band-gap; epitaxy |
Public URL | https://nottingham-repository.worktribe.com/output/904183 |
Publisher URL | http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.7b04453 |
Files
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Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by/4.0
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