Lattice-Matched Epitaxial Graphene Grown on Boron Nitride

Davies, Andrew; Albar, J.D.; Summerfield, Alex; Thomas, James C.; Cheng, Tin S.; Korolkov, Vladimir V.; Stapleton, Emily; Wrigley, James; Goodey, Nathan L.; Mellor, Christopher J.; Khlobystov, Andrei N.; Watanabe, Kenji; Taniguchi, Takashi; Foxon, C.T.; Eaves, Laurence; Novikov, Sergei V.; Beton, Peter H.

Abstract

Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band-gap but requires the formation of highly strained material and has not hitherto been realised. We demonstrate that aligned, lattice-matched graphene can be grown by molecular beam epitaxy using substrate temperatures in the range 1600-1710 °C and co-exists with a topologically-modified moiré pattern, and with regions of strained graphene which have giant moiré periods up to ~80 nm. Raman spectra reveal narrow red-shifted peaks due to isotropic strain, while the giant moiré patterns result in complex splitting of Raman peaks due to strain variations across the moiré unit cell. The lattice-matched graphene has a lower conductance than both the Frenkel-Kontorova-type domain walls, and also the topological defects where they terminate. We relate these results to theoretical models of band-gap formation in graphene/boron nitride heterostructures.

Citation

Davies, A., Albar, J., Summerfield, A., Thomas, J. C., Cheng, T. S., Korolkov, V. V., …Beton, P. H. (2018). Lattice-Matched Epitaxial Graphene Grown on Boron Nitride. Nano Letters, 18(1), 498-504. https://doi.org/10.1021/acs.nanolett.7b04453

• Journal Article Type: Article
• Acceptance Date: Dec 6, 2017
• Online Publication Date: Dec 12, 2017
• Publication Date: Jan 10, 2018
• Deposit Date: Dec 14, 2017
• Publicly Available Date: Dec 14, 2017
• Journal: Nano Letters
• Print ISSN: 1530-6984
• Electronic ISSN: 1530-6992
• Publisher: American Chemical Society
• Peer Reviewed: Peer Reviewed
• Volume: 18
• Issue: 1
• Pages: 498-504
• DOI: https://doi.org/10.1021/acs.nanolett.7b04453
• Keywords: graphene; boron nitride; growth; strain; band-gap; epitaxy
• Public URL: https://nottingham-repository.worktribe.com/output/904183
• Publisher URL: http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.7b04453