Ligand-induced control of photoconductive gain and doping in a hybrid graphene-quantum dot transistor

Turyanska, Lyudmila; Makarovsky, Oleg; Svatek, Simon A.; Beton, Peter H.; Mellor, Christopher J.; Patan�, Amalia; Eaves, Laurence; Thomas, Neil R.; Fay, Michael W.; Marsden, Alexander J.; Wilson, Neil R.

Abstract

In graphene devices decorated with a layer of near-infrared colloidal PbS quantum dots (QDs), the choice of the QD capping ligands and the integrity of the QD layer have a strong influence on the doping, carrier mobility, and photoresponse. By using short (<1 nm) capping ligands, the photoresponsivity of the graphene devices is enhanced up to 109 A W−1.

Citation

Turyanska, L., Makarovsky, O., Svatek, S. A., Beton, P. H., Mellor, C. J., Patanè, A., Eaves, L., Thomas, N. R., Fay, M. W., Marsden, A. J., & Wilson, N. R. (2015). Ligand-induced control of photoconductive gain and doping in a hybrid graphene-quantum dot transistor. Advanced Electronic Materials, 1(7), 1500062. https://doi.org/10.1002/aelm.201500062

• Journal Article Type: Article
• Acceptance Date: Jun 5, 2015
• Online Publication Date: Jun 5, 2015
• Publication Date: Jan 1, 2015
• Deposit Date: Jul 13, 2016
• Publicly Available Date: Jul 13, 2016
• Journal: Advanced Electronic Materials
• Electronic ISSN: 2199-160X
• Publisher: Wiley
• Peer Reviewed: Peer Reviewed
• Volume: 1
• Issue: 7
• Pages: 1500062
• DOI: https://doi.org/10.1002/aelm.201500062
• Public URL: https://nottingham-repository.worktribe.com/output/754254
• Publisher URL: http://onlinelibrary.wiley.com/doi/10.1002/aelm.201500062/abstract