Schottky-barrier thin-film transistors based on HfO2-capped InSe

Wang, Yiming; Zhang, Jiawei; Liang, Guangda; Shi, Yanpeng; Zhang, Yifei; Kudrynskyi, Zakhar R.; Kovalyuk, Zakhar D.; Patanè, Amalia; Xin, Qian; Song, Aimin

Abstract

© 2019 Author(s). Indium selenide (InSe) is an emerging two-dimensional semiconductor and a promising candidate for next generation thin film transistors (TFTs). Here, we report on Schottky barrier TFTs (SB-TFTs) in which a 0.9-nm-thick HfO2 dielectric layer encapsulates an InSe nanosheet, thus protecting the InSe-channel from the environment and reducing the Schottky-contact resistance through a dielectric dipole effect. These devices exhibit a low saturation source-drain voltage Vsat < 2 V and current densities of up to J = 2 mA/mm, well suited for low-power electronics. We present a detailed analysis of this type of transistor using the Y-function method from which we obtain accurate estimates of the contact resistance and field-effect mobility.

Citation

Wang, Y., Zhang, J., Liang, G., Shi, Y., Zhang, Y., Kudrynskyi, Z. R., …Song, A. (2019). Schottky-barrier thin-film transistors based on HfO2-capped InSe. Applied Physics Letters, 115(3), Article 033502. https://doi.org/10.1063/1.5096965

• Journal Article Type: Article
• Acceptance Date: Jul 1, 2019
• Online Publication Date: Jul 16, 2019
• Publication Date: Jul 15, 2019
• Deposit Date: Jul 31, 2019
• Publicly Available Date: Jul 16, 2020
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 115
• Issue: 3
• Article Number: 033502
• DOI: https://doi.org/10.1063/1.5096965
• Keywords: Physics and Astronomy (miscellaneous)
• Public URL: https://nottingham-repository.worktribe.com/output/2362521
• Publisher URL: https://aip.scitation.org/doi/abs/10.1063/1.5096965
• Additional Information: Received: 2019-03-21; Accepted: 2019-07-01; Published: 2019-07-16