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Schottky-barrier thin-film transistors based on HfO2-capped InSe

Wang, Yiming; Zhang, Jiawei; Liang, Guangda; Shi, Yanpeng; Zhang, Yifei; Kudrynskyi, Zakhar R.; Kovalyuk, Zakhar D.; Patanè, Amalia; Xin, Qian; Song, Aimin


Yiming Wang

Jiawei Zhang

Guangda Liang

Yanpeng Shi

Yifei Zhang

Zakhar R. Kudrynskyi

Zakhar D. Kovalyuk

Amalia Patanè

Qian Xin

Aimin Song

Journal Article Type Article
Publication Date Jul 15, 2019
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 115
Issue 3
Article Number 033502
APA6 Citation Wang, Y., Zhang, J., Liang, G., Shi, Y., Zhang, Y., Kudrynskyi, Z. R., …Song, A. (2019). Schottky-barrier thin-film transistors based on HfO2-capped InSe. Applied Physics Letters, 115(3), doi:10.1063/1.5096965
Keywords Physics and Astronomy (miscellaneous)
Publisher URL
Additional Information Received: 2019-03-21; Accepted: 2019-07-01; Published: 2019-07-16