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Thermally stable Peltier controlled vacuum chamber for electrical transport measurements (2024)
Journal Article
Poole, S. F., Amin, O. J., Solomon, A., Barton, L. X., Campion, R. P., Edmonds, K. W., & Wadley, P. (2024). Thermally stable Peltier controlled vacuum chamber for electrical transport measurements. Review of Scientific Instruments, 95(3), Article 035108. https://doi.org/10.1063/5.0186155

The design, manufacture, and characterization of an inexpensive, temperature-controlled vacuum chamber with millikelvin stability for electrical transport measurements at and near room temperature is reported. A commercially available Peltier device... Read More about Thermally stable Peltier controlled vacuum chamber for electrical transport measurements.

Altermagnetic lifting of Kramers spin degeneracy (2024)
Journal Article
Krempaský, J., Šmejkal, L., D’Souza, S. W., Hajlaoui, M., Springholz, G., Uhlířová, K., …Jungwirth, T. (2024). Altermagnetic lifting of Kramers spin degeneracy. Nature, 626(7999), 517-522. https://doi.org/10.1038/s41586-023-06907-7

Lifted Kramers spin degeneracy (LKSD) has been among the central topics of condensed-matter physics since the dawn of the band theory of solids1,2. It underpins established practical applications as well as current frontier research, ranging from mag... Read More about Altermagnetic lifting of Kramers spin degeneracy.

Electrical control of 180° domain walls in an antiferromagnet (2023)
Journal Article
Amin, O. J., Reimers, S., Maccherozzi, F., Dhesi, S. S., Novák, V., Campion, R. P., …Wadley, P. (2023). Electrical control of 180° domain walls in an antiferromagnet. APL Materials, 11(9), Article 091112. https://doi.org/10.1063/5.0156508

We demonstrate the reversible current-induced motion of 180° antiferromagnetic domain walls in a CuMnAs device. By controlling the magnitude and direction of the current pulse, the position of a domain wall can be switched between three distinct pinn... Read More about Electrical control of 180° domain walls in an antiferromagnet.

Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature (2023)
Journal Article
Amin, O. J., Poole, S. F., Reimers, S., Barton, L. X., Dal Din, A., Maccherozzi, F., …Wadley, P. (2023). Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature. Nature Nanotechnology, 18(8), 849-853. https://doi.org/10.1038/s41565-023-01386-3

Topologically protected magnetic textures are promising candidates for information carriers in future memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. These textures—nanoscale whirls in... Read More about Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature.

Experimental electronic structure of the electrically switchable antiferromagnet CuMnAs (2023)
Journal Article
Linn, A. G., Hao, P., Gordon, K. N., Narayan, D., Berggren, B. S., Speiser, N., …Dessau, D. S. (2023). Experimental electronic structure of the electrically switchable antiferromagnet CuMnAs. npj Quantum Materials, 8(1), Article 19. https://doi.org/10.1038/s41535-023-00554-x

Tetragonal CuMnAs is a room temperature antiferromagnet with an electrically reorientable Néel vector and a Dirac semimetal candidate. Direct measurements of the electronic structure of single-crystalline thin films of tetragonal CuMnAs using angle-r... Read More about Experimental electronic structure of the electrically switchable antiferromagnet CuMnAs.

Probing the manipulation of antiferromagnetic order in CuMnAs films using neutron diffraction (2022)
Journal Article
Poole, S. F., Barton, L. X., Wang, M., Manuel, P., Khalyavin, D., Langridge, S., …Wadley, P. (2022). Probing the manipulation of antiferromagnetic order in CuMnAs films using neutron diffraction. Applied Physics Letters, 121(5), Article 052402. https://doi.org/10.1063/5.0103390

We describe measurements of the uniaxial magnetic anisotropy and spin-flop rotation of the Néel vector in antiferromagnetic CuMnAs thin films using neutron diffraction. The suppression of the magnetic (100) peak under magnetic fields is observed for... Read More about Probing the manipulation of antiferromagnetic order in CuMnAs films using neutron diffraction.

Atomically sharp domain walls in an antiferromagnet (2022)
Journal Article
Krizek, F., Reimers, S., Kašpar, Z., Marmodoro, A., Michalička, J., Man, O., …Jungwirth, T. (2022). Atomically sharp domain walls in an antiferromagnet. Science Advances, 8(13), https://doi.org/10.1126/sciadv.abn3535

The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its physical fundamentals to applications in information technologies. Here, we explore antiferromagnetic CuMnAs in which... Read More about Atomically sharp domain walls in an antiferromagnet.

Defect-driven antiferromagnetic domain walls in CuMnAs films (2022)
Journal Article
Reimers, S., Kriegner, D., Gomonay, O., Carbone, D., Krizek, F., Novák, V., …Edmonds, K. W. (2022). Defect-driven antiferromagnetic domain walls in CuMnAs films. Nature Communications, 13(1), Article 724. https://doi.org/10.1038/s41467-022-28311-x

Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the micr... Read More about Defect-driven antiferromagnetic domain walls in CuMnAs films.

Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses (2020)
Journal Article
Kašpar, Z., Surýnek, M., Zubáč, J., Krizek, F., Novák, V., Campion, R. P., …Jungwirth, T. (2021). Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses. Nature Electronics, 4(1), 30-37. https://doi.org/10.1038/s41928-020-00506-4

Antiferromagnets are of potential use in the development of spintronic devices due to their ultrafast dynamics, insensitivity to external magnetic fields and absence of magnetic stray fields. Similar to their ferromagnetic counterparts, antiferromagn... Read More about Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses.

Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs (2020)
Journal Article
Janda, T., Godinho, J., Ostatnicky, T., Pfitzner, E., Ulrich, G., Hoehl, A., …Wunderlich, J. (2020). Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs. Physical Review Materials, 4(9), Article 094413. https://doi.org/10.1103/physrevmaterials.4.094413

Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of antiferromagnetic domains is one of the key prerequisit... Read More about Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs.

Investigation of magnetic anisotropy and heat dissipation in thin films of compensated antiferromagnet CuMnAs by pump–probe experiment (2020)
Journal Article
Surýnek, M., Saidl, V., Kašpar, Z., Novák, V., Campion, R. P., Wadley, P., & Němec, P. (2020). Investigation of magnetic anisotropy and heat dissipation in thin films of compensated antiferromagnet CuMnAs by pump–probe experiment. Journal of Applied Physics, 127(23), 233904. https://doi.org/10.1063/5.0006185

We recently reported on a method to determine the easy axis position in a 10 nm thick film of the fully compensated antiferromagnet CuMnAs. The film had a uniaxial magnetic anisotropy and the technique utilized a magneto-optical pump and probe experi... Read More about Investigation of magnetic anisotropy and heat dissipation in thin films of compensated antiferromagnet CuMnAs by pump–probe experiment.

Low-energy switching of antiferromagnetic CuMnAs/GaP using sub-10 nanosecond current pulses (2020)
Journal Article
Omari, K. A., Barton, L. X., Amin, O., Campion, R. P., Rushforth, A. W., Kent, A. J., …Edmonds, K. W. (2020). Low-energy switching of antiferromagnetic CuMnAs/GaP using sub-10 nanosecond current pulses. Journal of Applied Physics, 127(19), Article 193906. https://doi.org/10.1063/5.0006183

The recently discovered electrical-induced switching of antiferromagnetic (AF) materials that have spatial inversion asymmetry has enriched the field of spintronics immensely and opened the door for the concept of antiferromagnetic memory devices. Cu... Read More about Low-energy switching of antiferromagnetic CuMnAs/GaP using sub-10 nanosecond current pulses.

Gating effects in antiferromagnetic CuMnAs (2019)
Journal Article
Grzybowski, M. J., Wadley, P., Edmonds, K. W., Campion, R. P., Dybko, K., Majewicz, M., …Dietl, T. (2019). Gating effects in antiferromagnetic CuMnAs. AIP Advances, 9(11), 1-5. https://doi.org/10.1063/1.5124354

Antiferromagnets (AFs) attract much attention due to their potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control the properties and the Néel vector direction of AFs. Among... Read More about Gating effects in antiferromagnetic CuMnAs.

Electrically induced and detected Néel vector reversal in a collinear antiferromagnet (2018)
Journal Article
Godinho, J., Reichlová, H., Kriegner, D., Novák, V., Olejník, K., Kašpar, Z., …Wunderlich, J. (2018). Electrically induced and detected Néel vector reversal in a collinear antiferromagnet. Nature Communications, 9(1), Article 4686. https://doi.org/10.1038/s41467-018-07092-2

© 2018, The Author(s). Antiferromagnets are enriching spintronics research by many favorable properties that include insensitivity to magnetic fields, neuromorphic memory characteristics, and ultra-fast spin dynamics. Designing memory devices with el... Read More about Electrically induced and detected Néel vector reversal in a collinear antiferromagnet.

Spin switching in antiferromagnets using Néel-order spin-orbit torques (2018)
Journal Article
Wadley, P., & Edmonds, K. (2018). Spin switching in antiferromagnets using Néel-order spin-orbit torques. Chinese Physics B, 27(10), Article 107201. https://doi.org/10.1088/1674-1056/27/10/107201

Antiferromagnets offer considerable potential for electronic device applications. This article reviews recent demonstrations of spin manipulation in antiferromagnetic devices using applied electrical currents. Due to spin-orbit coupling in environmen... Read More about Spin switching in antiferromagnets using Néel-order spin-orbit torques.

Current polarity-dependent manipulation of antiferromagnetic domains (2018)
Journal Article
Wadley, P., Reimers, S., Grzybowski, M. J., Andrews, C., Wang, M., Chauhan, J., …Jungwirth, T. (2018). Current polarity-dependent manipulation of antiferromagnetic domains. Nature Nanotechnology, 13(5), 362-365. https://doi.org/10.1038/s41565-018-0079-1

Antiferromagnets have several favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields. Tetragonal CuMnAs is a testbed system in which the antiferro... Read More about Current polarity-dependent manipulation of antiferromagnetic domains.

Terahertz electrical writing speed in an antiferromagnetic memory (2018)
Journal Article
Olejník, K., Seifert, T., Kašpar, Z., Novák, V., Wadley, P., Campion, R. P., …Jungwirth, T. (2018). Terahertz electrical writing speed in an antiferromagnetic memory. Science Advances, 4(3), Article eaar3566. https://doi.org/10.1126/sciadv.aar3566

© 2018 American Association for the Advancement of Science. All rights reserved. The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based... Read More about Terahertz electrical writing speed in an antiferromagnetic memory.

Spin transport and spin torque in antiferromagnetic devices (2018)
Journal Article
Železný, J., Wadley, P., Olejnik, K., Hoffmann, A., & Ohno, H. (2018). Spin transport and spin torque in antiferromagnetic devices. Nature Physics, 14(3), 220-228. https://doi.org/10.1038/s41567-018-0062-7

© 2018 The Publisher. Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets, which represent the more common form of magnetically ordered materials, have found less practical application beyond their use fo... Read More about Spin transport and spin torque in antiferromagnetic devices.

Control of antiferromagnetic spin axis orientation in bilayer Fe/CuMnAs films (2017)
Journal Article
Wadley, P., Edmonds, K., Shahedkhah, M., Campion, R., Gallagher, B., Železný, J., …Dhesi, S. (in press). Control of antiferromagnetic spin axis orientation in bilayer Fe/CuMnAs films. Scientific Reports, 7, Article 11147. https://doi.org/10.1038/s41598-017-11653-8

Using x-ray magnetic circular and linear dichroism techniques, we demonstrate a collinear exchange coupling between an epitaxial antiferromagnet, tetragonal CuMnAs, and an Fe surface layer. A small uncompensated Mn magnetic moment is observed which i... Read More about Control of antiferromagnetic spin axis orientation in bilayer Fe/CuMnAs films.

Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility (2017)
Journal Article
Olejnik, K., Schuler, V., Marti, X., Novák, V., Kaspar, Z., Wadley, P., …Jungwirth, T. (2017). Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility. Nature Communications, 8, Article 15434. https://doi.org/10.1038/ncomms15434

Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the spin-dynamics frequency scale in terahertz. Recent experiments have demonstrated that relativ... Read More about Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility.

Imaging current-induced switching of antiferromagnetic domains in CuMnAs (2017)
Journal Article
Grzybowski, M., Wadley, P., Edmonds, K., Beardsley, R., Hills, V. A., Campion, R., …Dhesi, S. (2017). Imaging current-induced switching of antiferromagnetic domains in CuMnAs. Physical Review Letters, 118(5), Article 057701. https://doi.org/10.1103/PhysRevLett.118.057701

The magnetic order in antiferromagnetic materials is hard to control with external magnetic fields. Using X-ray Magnetic Linear Dichroism microscopy, we show that staggered effective fields generated by electrical current can induce modification of t... Read More about Imaging current-induced switching of antiferromagnetic domains in CuMnAs.

Optical determination of the Néel vector in a CuMnAs thin-film antiferromagnet (2017)
Journal Article
Saidl, V., Němec, P., Wadley, P., Hills, V., Campion, R. P., Novák, V., …Jungwirth, T. (2017). Optical determination of the Néel vector in a CuMnAs thin-film antiferromagnet. Nature Photonics, 11(2), 91-96. https://doi.org/10.1038/nphoton.2016.255

Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices.1-10 Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields, lead... Read More about Optical determination of the Néel vector in a CuMnAs thin-film antiferromagnet.

Contributions from coherent and incoherent lattice excitations to ultrafast optical control of magnetic anisotropy of metallic films (2016)
Journal Article
Kats, V. N., Linnik, T. L., Salasyuk, A. S., Rushforth, A. W., Wang, M., Wadley, P., …Scherbakov, A. V. (2016). Contributions from coherent and incoherent lattice excitations to ultrafast optical control of magnetic anisotropy of metallic films. Proceedings of SPIE, 9835(98351Q), https://doi.org/10.1117/12.2238020

Spin-lattice coupling is one of the most prominent interactions mediating response of spin ensemble to ultrafast optical excitation. Here we exploit optically generated coherent and incoherent phonons to drive coherent spin dynamics, i.e. precession,... Read More about Contributions from coherent and incoherent lattice excitations to ultrafast optical control of magnetic anisotropy of metallic films.

Ultrafast changes of magnetic anisotropy driven by laser-generated coherent and noncoherent phonons in metallic films (2016)
Journal Article
Kats, V., Linnik, T., Salasyuk, A., Rushforth, A., Wang, M., Wadley, P., …Scherbakov, A. (2016). Ultrafast changes of magnetic anisotropy driven by laser-generated coherent and noncoherent phonons in metallic films. Physical Review B, 93(21), Article 214422. https://doi.org/10.1103/PhysRevB.93.214422

Ultrafast optical excitation of a metal ferromagnetic film results in a modification of the magnetocrystalline anisotropy and induces the magnetization precession. We consider two main contributions to these processes: an effect of noncoherent phonon... Read More about Ultrafast changes of magnetic anisotropy driven by laser-generated coherent and noncoherent phonons in metallic films.

Electrical switching of an antiferromagnet (2016)
Journal Article
Wadley, P., Howells, B., Železný, J., Andrews, C., Hills, V., Campion, R. P., …Jungwirth, T. (2016). Electrical switching of an antiferromagnet. Science, 351(6273), 587-590. https://doi.org/10.1126/science.aab1031

Antiferromagnets are hard to control by external magnetic fields because of the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization. However, relativistic quantum mechanics allows for generating cur... Read More about Electrical switching of an antiferromagnet.

Antiferromagnetic structure in tetragonal CuMnAs thin films (2015)
Journal Article
Wadley, P., Hills, V. A., Shahedkhah, M. R., Edmonds, K. W., Campion, R. P., Novák, V., …Jungwirth, T. (2015). Antiferromagnetic structure in tetragonal CuMnAs thin films. Scientific Reports, 5(1), Article 17079. https://doi.org/10.1038/srep17079

Tetragonal CuMnAs is an antiferromagnetic material with favourable properties for applications in spintronics. Using a combination of neutron diffraction and x-ray magnetic linear dichroism, we determine the spin axis and magnetic structure in tetrag... Read More about Antiferromagnetic structure in tetragonal CuMnAs thin films.

Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers (2015)
Journal Article
Wang, M., Wadley, P., Campion, R. P., Rushforth, A. W., Edmonds, K. W., Gallagher, B. L., …Langridge, S. (2015). Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers. Journal of Applied Physics, 118(5), Article 053913. https://doi.org/10.1063/1.4928206

We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga... Read More about Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers.

Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As (2014)
Journal Article
Tesařová, N., Butkovičová, D., Campion, R. P., Rushforth, A. W., Edmonds, K. W., Wadley, P., …Němec, P. (2014). Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As. Physical review B: Condensed matter and materials physics, 90(15), Article 155203. https://doi.org/10.1103/physrevb.90.155203

We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has an easy axis in the sample plane, and (Ga,Mn)(As,P), which has an easy axis perpendicular to the sample plane.We use an op... Read More about Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As.

Room-temperature antiferromagnetic memory resistor (2014)
Journal Article
Marti, X., Fina, I., Frontera, C., Liu, J., Wadley, P., He, Q., …Ramesh, R. (2014). Room-temperature antiferromagnetic memory resistor. Nature Materials, 13(4), 367-374. https://doi.org/10.1038/nmat3861

The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical me... Read More about Room-temperature antiferromagnetic memory resistor.