Experimental Investigation and Verification of Traps affecting the performance of 3C-SiC-on-Si Schottky Barrier Diodes
(2019)
Conference Proceeding
Monolithic integration of wide bandgap (WBG) devices for power integrated circuits is currently of increased interest. The ability of the cubic phase (3C-) of Silicon Carbide (SiC) to grow heteroepitaxially on Silicon (Si) substrates (3C- SiC-on-Si)... Read More about Experimental Investigation and Verification of Traps affecting the performance of 3C-SiC-on-Si Schottky Barrier Diodes.