All Outputs (4)

Engineering of hybrid photonic-plasmonic devices for enhanced light-matter interactions (2017)
Book Chapter
Mossayebi, M., Bellanca, G., Parini, A., Wright, A. J., & Larkins, E. C. (2017). Engineering of hybrid photonic-plasmonic devices for enhanced light-matter interactions. In A. Agrawal, T. Benson, R. De La Rue, & G. Wurtz (Eds.), Recent Trends in Computational Photonics, 369-390. Springer. doi:10.1007/978-3-319-55438-9_13

In this chapter, we focus on the design and characteristics of a hybrid photonic-plasmonic nanoresonator using 3D finite-difference time-domain simulations. This structure is capable of localization of high intensity light in a subwavelength hotspot,... Read More about Engineering of hybrid photonic-plasmonic devices for enhanced light-matter interactions.

High-brightness laser diodes with external feedback (2017)
Book Chapter
Helal, M. A., Kaunga-Nyirenda, S. N., Bull, S., & Larkins, E. (2017). High-brightness laser diodes with external feedback. In J. Piprek (Ed.), Handbook of Optoelectronic Device Modeling and Simulation. Vol. 2. Lasers, Modulators, Photodetectors, Solar Cells, and Numerical Methods,Taylor & Francis

Wave mixing effects in semiconductor optical amplifiers (2017)
Book Chapter
Kaunga-Nyirenda, S. N., Dlubek, M., Lim, J. J., Bull, S., Phillips, A., Sujecki, S., & Larkins, E. (2017). Wave mixing effects in semiconductor optical amplifiers. In J. Piprek (Ed.), Handbook of Optoelectronic Device Modeling and Simulation. Vol. 1. Fundamentals, Materials, Nanostructures, LEDs, and AmplifiersTaylor & Francis

TEM assessment of As-doped GaN epitaxial layers grown on sapphire (2004)
Book Chapter
Fay, M. W., Harrison, I., Larkins, E. C., Novikov, S. V., Foxon, C., & Brown, P. D. (2004). TEM assessment of As-doped GaN epitaxial layers grown on sapphire. In S. McVitie, & D. McComb (Eds.), Electron Microscopy and Analysis 2003: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003 (23-26). Institute of Physics Publishing

TEM investigations of As-doped GaN layers grown by plasma-assisted molecular beam epitaxy on sapphire substrates reveal the presence of extensive regions of cubic stacking disorder within the hexagonal GaN matrix. Electron energy loss spectroscopy su... Read More about TEM assessment of As-doped GaN epitaxial layers grown on sapphire.