All Outputs (6)

Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions (2021)
Journal Article

2D layered chalcogenide semiconductors have been proposed as a promising class of materials for low-dimensional electronic, optoelectronic, and spintronic devices. Here, all-2D van der Waals vertical spin-valve devices, that combine the 2D layered se... Read More about Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions.

Tunable spin-orbit coupling in two-dimensional InSe (2021)
Journal Article

We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer γ-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and... Read More about Tunable spin-orbit coupling in two-dimensional InSe.

Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures (2021)
Journal Article

The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waa... Read More about Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures.

Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T (2021)
Journal Article

The SnSe2(1-x)S2x alloy is a van der Waals semiconductor with versatile, tunable electronic properties and prospects for future applications ranging from electronics to thermoelectrics and superconductivity. Its band structure and carrier effective m... Read More about Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T.

Resonance and antiresonance in Raman scattering in GaSe and InSe crystals (2021)
Journal Article

The temperature effect on the Raman scattering efficiency is investigated in ?-GaSe and ?-InSe crystals. We found that varying the temperature over a broad range from 5 to 350 K permits to achieve both the resonant conditions and the antiresonance be... Read More about Resonance and antiresonance in Raman scattering in GaSe and InSe crystals.

Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy (2021)
Journal Article

The ability of a material to conduct heat influences many physical phenomena, ranging from thermal management in nanoscale devices to thermoelectrics. Van der Waals two dimensional (2D) materials offer a versatile platform to tailor heat transfer due... Read More about Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy.