All Outputs (25)

Thin Ga2O3 Layers by Thermal Oxidation of van der Waals GaSe Nanostructures for Ultraviolet Photon Sensing (2024)
Journal Article
Cottam, N. D., Dewes, B. T., Shiffa, M., Cheng, T. S., Novikov, S. V., Mellor, C. J., Makarovsky, O., Gonzalez, D., Ben, T., & Patanè, A. (in press). Thin Ga2O3 Layers by Thermal Oxidation of van der Waals GaSe Nanostructures for Ultraviolet Photon Sensing. ACS Applied Nano Materials,

Two-dimensional semiconductors (2DSEM) based on van der Waals crystals offer important avenues for nanotechnologies beyond the constraints of Moore's law and traditional semiconductors, such as silicon (Si). However, their application necessitates pr... Read More about Thin Ga2O3 Layers by Thermal Oxidation of van der Waals GaSe Nanostructures for Ultraviolet Photon Sensing.

Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride (2024)
Journal Article
Shima, K., Cheng, T. S., Mellor, C. J., Beton, P. H., Elias, C., Valvin, P., …Chichibu, S. F. (2024). Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride. Scientific Reports, 14(1), Article 169. https://doi.org/10.1038/s41598-023-50502-9

Cathodoluminescence (CL) spectroscopy is a suitable technique for studying the luminescent properties of optoelectronic materials because CL has no limitation on the excitable bandgap energy and eliminates ambiguous signals due to simple light scatte... Read More about Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride.

Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing (2023)
Journal Article
Shiffa, M., Dewes, B. T., Bradford, J., Cottam, N. D., Cheng, T. S., Mellor, C. J., …Patanè, A. (2024). Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing. Small, 20(7), Article 2305865. https://doi.org/10.1002/smll.202305865

2D semiconductors (2SEM) can transform many sectors, from information and communication technology to healthcare. To date, top‐down approaches to their fabrication, such as exfoliation of bulk crystals by “scotch‐tape,” are widely used, but have limi... Read More about Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing.

Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy (2023)
Journal Article
Bradford, J., Cheng, T. S., James, T. S., Khlobystov, A. N., Mellor, C. J., Watanabe, K., …Beton, P. H. (2023). Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy. 2D Materials, 10(3), Article 035035. https://doi.org/10.1088/2053-1583/acdefc

Integration of graphene and hexagonal boron nitride (hBN) in lateral heterostructures has provided a route to broadly engineer the material properties by quantum confinement of electrons or introduction of novel electronic and magnetic states at the... Read More about Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy.

Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride (2022)
Journal Article
Cassabois, G., Fugallo, G., Elias, C., Valvin, P., Rousseau, A., Gil, B., …Novikov, S. (2022). Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride. Physical Review X, 12(1), Article 011057. https://doi.org/10.1103/physrevx.12.011057

The light-matter interaction in bulk semiconductors is in the strong coupling regime with hybrid eigenstates, the so-called exciton-polaritons and phonon-polaritons. In two-dimensional (2D) systems, the translational invariance is broken in the direc... Read More about Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride.

Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride (2022)
Journal Article
Cassabois, G., Fugallo, G., Elias, C., Valvin, P., Rousseau, A., Gil, B., …Novikov, S. (2022). Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride. Physical Review X, 12(1), Article 011057. https://doi.org/10.1103/PhysRevX.12.011057

The light-matter interaction in bulk semiconductors is in the strong-coupling regime with hybrid eigenstates, the so-called exciton polaritons and phonon polaritons. In two-dimensional (2D) systems, the translational invariance is broken in the direc... Read More about Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride.

Band gap measurements of monolayer h-BN and insights into carbon-related point defects (2021)
Journal Article
Román, R. J. P., Costa, F. J. R., Zobelli, A., Elias, C., Valvin, P., Cassabois, G., …Zagonel, L. F. (2021). Band gap measurements of monolayer h-BN and insights into carbon-related point defects. 2D Materials, 8(4), Article 044001. https://doi.org/10.1088/2053-1583/ac0d9c

Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room temperature si... Read More about Band gap measurements of monolayer h-BN and insights into carbon-related point defects.

Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures (2021)
Journal Article
Wrigley, J., Bradford, J., James, T., Cheng, T. S., Thomas, J., Mellor, C. J., …Beton, P. H. (2021). Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures. 2D Materials, 8(3), 1-10. https://doi.org/10.1088/2053-1583/abea66

Monolayers of hexagonal boron nitride (hBN) are grown on graphite substrates using high-temperature molecular beam epitaxy (HT-MBE). The hBN monolayers are observed to grow predominantly from step edges on the graphite surface and exhibit a strong de... Read More about Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures.

Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride (2020)
Journal Article
Mendelson, N., Chugh, D., Reimers, J. R., Cheng, T. S., Gottscholl, A., Long, H., …Aharonovich, I. (2021). Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride. Nature Materials, 20(3), 321-328. https://doi.org/10.1038/s41563-020-00850-y

Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered increasing attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations,... Read More about Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride.

Composition and strain relaxation of In x Ga1−x N graded core–shell nanorods (2018)
Journal Article
Soundararajah, Q. Y., Webster, R. F., Griffiths, I. J., Novikov, S. V., Foxon, C. T., & Cherns, D. (2018). Composition and strain relaxation of In x Ga1−x N graded core–shell nanorods. Nanotechnology, 29(40), Article 405706. https://doi.org/10.1088/1361-6528/aad38d

Two In x Ga1−x N nanorod samples with graded In compositions of x = 0.5–0 (Ga-rich) and x = 0.5–1 (In-rich) grown by molecular beam epitaxy were studied using transmission electron microscopy. The nanorods had a wurtzite crystal structure with growth... Read More about Composition and strain relaxation of In x Ga1−x N graded core–shell nanorods.

Photoelastic properties of zinc-blende (AlGa)N in the UV: picosecond ultrasonic studies (2018)
Journal Article
Whale, J., Akimov, A. V., Novikov, S. V., Mellor, C. J., & Kent, A. J. (2018). Photoelastic properties of zinc-blende (AlGa)N in the UV: picosecond ultrasonic studies. Physical Review Materials, 2(3), https://doi.org/10.1103/PhysRevMaterials.2.034606

Picosecond ultrasonics was used to study the photoelastic properties of zinc-blende (cubic) c-AlₓGa₁₋ₓN with x around 0.5 The velocities for longitudinal sound in the alloys were measured using ultrafast UV pump-probe experiments with (Al... Read More about Photoelastic properties of zinc-blende (AlGa)N in the UV: picosecond ultrasonic studies.

Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN (2017)
Journal Article
Novikov, S. V., Kent, A., & Foxon, C. (2017). Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN. Progress in Crystal Growth and Characterization of Materials, 63(2), https://doi.org/10.1016/j.pcrysgrow.2017.04.001

Currently there is a high level of interest in the development of ultraviolet (UV) light sources for solid state lighting, optical sensors, surface decontamination and water purification. III-V semiconductor UV LEDs are now successfully manufactured... Read More about Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN.

Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy (2017)
Journal Article
Vuong, T., Cassabois, G., Valvin, P., Rousseau, E., Summerfield, A., Mellor, C., …Gil, B. (2017). Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy. 2D Materials, 4(2), Article 021023. https://doi.org/10.1088/2053-1583/aa604a

Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources (2017)
Journal Article
Novikov, S. V., & Foxon, C. (2017). Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources. Journal of Crystal Growth, 477, 154-158. https://doi.org/10.1016/j.jcrysgro.2017.01.007

Plasma-assisted molecular beam epitaxy (PA-MBE) is now widely used for the growth of group III-nitrides. Many years ago it became clear that during PA-MBE there is unintentional doping of GaN with boron (B) due to decomposition of the pyrolytic boron... Read More about Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources.

Intermixing studies in GaN_1−xSb_x highly mismatched alloys (2016)
Journal Article
Sarney, W. L., Svensson, S. P., Ting, M., Segercrantz, N., Walukiewicz, W., Yu, K. M., …Foxon, C. T. (2017). Intermixing studies in GaN_1−xSb_x highly mismatched alloys. Applied Optics, 56(3), B64-B69. https://doi.org/10.1364/AO.56.000B64

GaN1−xSbx with x~ 5-7% is a highly mismatched alloy predicted to have favorable properties for application as an electrode in a photo-electrochemical cell for solar water splitting. In this study, we grew GaN1−xSbx under conditions intended to induce... Read More about Intermixing studies in GaN_1−xSb_x highly mismatched alloys.

Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source (2016)
Journal Article
Novikov, S. V., Staddon, C. R., Sahonta, S.-L., Oliver, R., Humphreys, C., & Foxon, C. (in press). Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source. Journal of Crystal Growth, https://doi.org/10.1016/j.jcrysgro.2016.07.038

The recent development of group III nitrides allows researchers world-wide to consider AlGaN based light emitting diodes as a possible new alternative deep ultra–violet light source for surface decontamination and water purification. In this paper we... Read More about Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source.

X-ray detection with zinc-blende (cubic) GaN Schottky diodes (2016)
Journal Article
Gohil, T., Whale, J., Lioliou, G., Novikov, S. V., Foxon, C., Kent, A., & Barnett, A. (2016). X-ray detection with zinc-blende (cubic) GaN Schottky diodes. Scientific Reports, 6, Article 29535. https://doi.org/10.1038/srep29535

The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 μm and 400 μm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in c... Read More about X-ray detection with zinc-blende (cubic) GaN Schottky diodes.

Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties (2016)
Journal Article
Yu, K., Sarney, W., Novikov, S. V., Segercrantz, N., Ting, M., Shaw, M., …Foxon, C. (2016). Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties. Semiconductor Science and Technology, 31(8), https://doi.org/10.1088/0268-1242/31/8/083001

Highly mismatched alloys (HMAs) is a class of semiconductor alloys whose constituents are distinctly different in terms of size, ionicity and/or electronegativity. Electronic properties of the alloys deviate significantly from an interpolation scheme... Read More about Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties.

Characterization of p-GaN1−xAsx/n-GaN PN junction diodes (2016)
Journal Article
Qian, H., Lee, K., Vajargah, S., Novikov, S., Guiney, I., Zhang, S., …Houston, P. (2016). Characterization of p-GaN1−xAsx/n-GaN PN junction diodes. Semiconductor Science and Technology, 31(6), https://doi.org/10.1088/0268-1242/31/6/065020

The structural properties and electrical conduction mechanisms of p-type amorphous GaN1−xAsx/n-type crystalline GaN PN junction diodes are presented. A hole concentration of 8.5×1019 cm−3 is achieved which allows a specific contact resistance of 1.3×... Read More about Characterization of p-GaN1−xAsx/n-GaN PN junction diodes.

Surface acoustic wave velocity and elastic constants of cubic GaN (2016)
Journal Article
Riobóo, R. J. J., Cuscó, R., Prieto, C., Kopittke, C., Novikov, S. V., & Artús, L. (2016). Surface acoustic wave velocity and elastic constants of cubic GaN. Applied Physics Express, 9(6), Article 061001. https://doi.org/10.7567/APEX.9.061001

We present high-resolution surface Brillouin scattering measurements on cubic GaN layers grown on GaAs substrate. By using a suitable scattering geometry, scattering by surface acoustic waves is recorded for different azimuthal angles, and the surfac... Read More about Surface acoustic wave velocity and elastic constants of cubic GaN.